JPS55133127A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55133127A
JPS55133127A JP4071179A JP4071179A JPS55133127A JP S55133127 A JPS55133127 A JP S55133127A JP 4071179 A JP4071179 A JP 4071179A JP 4071179 A JP4071179 A JP 4071179A JP S55133127 A JPS55133127 A JP S55133127A
Authority
JP
Japan
Prior art keywords
areas
wiring
electrode
area
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4071179A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0151787B2 (enrdf_load_stackoverflow
Inventor
Kunihiko Hirashima
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP4071179A priority Critical patent/JPS55133127A/ja
Publication of JPS55133127A publication Critical patent/JPS55133127A/ja
Publication of JPH0151787B2 publication Critical patent/JPH0151787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Measurement Of Current Or Voltage (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manipulation Of Pulses (AREA)
JP4071179A 1979-04-04 1979-04-04 Semiconductor device Granted JPS55133127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4071179A JPS55133127A (en) 1979-04-04 1979-04-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4071179A JPS55133127A (en) 1979-04-04 1979-04-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55133127A true JPS55133127A (en) 1980-10-16
JPH0151787B2 JPH0151787B2 (enrdf_load_stackoverflow) 1989-11-06

Family

ID=12588158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4071179A Granted JPS55133127A (en) 1979-04-04 1979-04-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55133127A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0151787B2 (enrdf_load_stackoverflow) 1989-11-06

Similar Documents

Publication Publication Date Title
JPS51147191A (en) Hall element and its method of manufacturing
JPS5291472A (en) Voltage detection circuit
JPS57208177A (en) Semiconductor negative resistance element
JPS5799765A (en) Semiconductor resistance element
JPS55133127A (en) Semiconductor device
JPS5710533A (en) Logical circuit
JPS51128278A (en) Integrated circuit with resistance element
JPS57110929A (en) Temperature detection circuit
JPS6447077A (en) Protective circuit for power mos field-effect transistor
JPS5650553A (en) Semiconductor device
JPS57133677A (en) Semiconductor integrated circuit device
JPS57137847A (en) Chemically sensitive element and its preparation
JPS5645065A (en) Voltage split circuit
JPS57196558A (en) Semiconductor integrated circuit device
JPS57208176A (en) Semiconductor negative resistance element
JPS54142081A (en) Semiconductor integrated circuit
JPS55125645A (en) Production of semiconductor device
JPS5799789A (en) Semiconductor thermo-sensitive element
JPS5724565A (en) Semiconductor circuit element
JPS5571068A (en) Mos transistor and its manufacturing method
JPS5760867A (en) Tunnel effect load resistance device
JPS557664A (en) Temperature detection circuit
JPS57104269A (en) Load detecting element
JPS5324280A (en) Production of semiconductor integrated circuit
JPS644057A (en) Semiconductor device