JPS55132035A - Pure semiconductor material* method of precipitating silidon and nozzle for executing same method - Google Patents

Pure semiconductor material* method of precipitating silidon and nozzle for executing same method

Info

Publication number
JPS55132035A
JPS55132035A JP1236880A JP1236880A JPS55132035A JP S55132035 A JPS55132035 A JP S55132035A JP 1236880 A JP1236880 A JP 1236880A JP 1236880 A JP1236880 A JP 1236880A JP S55132035 A JPS55132035 A JP S55132035A
Authority
JP
Japan
Prior art keywords
silidon
precipitating
nozzle
semiconductor material
pure semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1236880A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5712288B2 (enExample
Inventor
Buguru Eabuin
Guriisuhanmaa Ruudorufu
Rorentsu Herumuuto
Hamusutaa Herumuuto
Ketsuperu Furantsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of JPS55132035A publication Critical patent/JPS55132035A/ja
Publication of JPS5712288B2 publication Critical patent/JPS5712288B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/02—Feed or outlet devices therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1236880A 1979-03-30 1980-02-04 Pure semiconductor material* method of precipitating silidon and nozzle for executing same method Granted JPS55132035A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2912661A DE2912661C2 (de) 1979-03-30 1979-03-30 Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens

Publications (2)

Publication Number Publication Date
JPS55132035A true JPS55132035A (en) 1980-10-14
JPS5712288B2 JPS5712288B2 (enExample) 1982-03-10

Family

ID=6066899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1236880A Granted JPS55132035A (en) 1979-03-30 1980-02-04 Pure semiconductor material* method of precipitating silidon and nozzle for executing same method

Country Status (5)

Country Link
US (1) US4311545A (enExample)
JP (1) JPS55132035A (enExample)
DE (1) DE2912661C2 (enExample)
IT (1) IT1143192B (enExample)
NL (1) NL8001059A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176924A (ja) * 1982-03-29 1983-10-17 デイナミ−ト・ノ−ベル・アクチエンゲゼルシヤフト 純粋な半導体材料の製法及びその装置
JPS6074509A (ja) * 1983-09-30 1985-04-26 Hitachi Ltd 常圧ｃｖｄ装置
JP2010030878A (ja) * 2008-06-24 2010-02-12 Mitsubishi Materials Corp 多結晶シリコン製造装置

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572312B1 (fr) * 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4724160A (en) * 1986-07-28 1988-02-09 Dow Corning Corporation Process for the production of semiconductor materials
US5118485A (en) * 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
DE4424929C2 (de) * 1994-07-14 1997-02-13 Wacker Chemie Gmbh Halterung für Trägerkörper in einer Vorrichtung zur Abscheidung von Halbleitermaterial
DE19608885B4 (de) * 1996-03-07 2006-11-16 Wacker Chemie Ag Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern
KR100474791B1 (ko) * 1996-05-10 2005-06-27 스미또모 가가꾸 가부시키가이샤 화합물반도체의제조방법
US5849076A (en) * 1996-07-26 1998-12-15 Memc Electronic Materials, Inc. Cooling system and method for epitaxial barrel reactor
DE10101040A1 (de) * 2001-01-11 2002-07-25 Wacker Chemie Gmbh Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes
US7033561B2 (en) 2001-06-08 2006-04-25 Dow Corning Corporation Process for preparation of polycrystalline silicon
RU2222648C2 (ru) * 2001-11-02 2004-01-27 Добровенский Владимир Вениаминович Реактор для получения широких пластин исходного поликристаллического кремния
RU2222649C2 (ru) * 2001-12-13 2004-01-27 Добровенский Владимир Вениаминович Способ получения исходного поликристаллического кремния в виде широких пластин с малой концентрацией фоновых примесей
KR101094913B1 (ko) * 2006-06-09 2011-12-16 소이텍 Iii-v 족 반도체 물질을 형성하기 위한 제조 공정 시스템
CN101152932B (zh) * 2006-09-27 2011-12-14 华东理工大学 具有多个出料口的含碳固体粉料供料装置及其供料方法
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
US8382898B2 (en) * 2006-11-22 2013-02-26 Soitec Methods for high volume manufacture of group III-V semiconductor materials
EP2083935B1 (en) 2006-11-22 2012-02-22 S.O.I.TEC Silicon on Insulator Technologies Method for epitaxial deposition of a monocrystalline Group III-V semiconductor material
US8197597B2 (en) 2006-11-22 2012-06-12 Soitec Gallium trichloride injection scheme
KR101379410B1 (ko) 2006-11-22 2014-04-11 소이텍 3-5족 반도체 재료들의 대량생산을 위한 설비
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
KR101390425B1 (ko) 2006-11-22 2014-05-19 소이텍 화학기상증착 챔버용 온도제어 퍼지 게이트 밸브
WO2008064080A1 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
EP2039653B1 (en) * 2007-09-20 2015-12-23 Mitsubishi Materials Corporation Reactor for polycrystalline silicon and polycrystalline silicon production method
EP2271788A2 (en) * 2008-03-26 2011-01-12 GT Solar Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor
EP2271587A1 (en) * 2008-03-26 2011-01-12 GT Solar Incorporated Gold-coated polysilicon reactor system and method
RU2503905C2 (ru) * 2008-04-14 2014-01-10 Хемлок Семикондактор Корпорейшн Производственная установка для осаждения материала и электрод для использования в ней
JP5959198B2 (ja) * 2008-04-14 2016-08-02 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置及び当該装置において使用される電極
KR101639577B1 (ko) * 2008-04-14 2016-07-14 헴로크세미컨덕터코포레이션 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극
KR100892123B1 (ko) * 2008-12-31 2009-04-09 (주)세미머티리얼즈 폴리 실리콘 증착장치
JP5477145B2 (ja) * 2009-04-28 2014-04-23 三菱マテリアル株式会社 多結晶シリコン反応炉
RU2012101082A (ru) * 2009-07-14 2013-08-20 Хемлок Семикэндактор Корпорейшн Способ ингибирования образования осадков в производственной системе
DE102009043950B4 (de) * 2009-09-04 2012-02-02 G+R Technology Group Ag Reaktor zur Herstellung von polykristallinem Silizium
US9315895B2 (en) * 2010-05-10 2016-04-19 Mitsubishi Materials Corporation Apparatus for producing polycrystalline silicon
DE102010040093A1 (de) * 2010-09-01 2012-03-01 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
US8871153B2 (en) 2012-05-25 2014-10-28 Rokstar Technologies Llc Mechanically fluidized silicon deposition systems and methods
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
CN104401998B (zh) * 2014-11-25 2016-04-13 中国恩菲工程技术有限公司 喷嘴

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL124690C (enExample) * 1958-05-29
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
NL251143A (enExample) * 1959-05-04
USB524765I5 (enExample) * 1966-02-03 1900-01-01
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176924A (ja) * 1982-03-29 1983-10-17 デイナミ−ト・ノ−ベル・アクチエンゲゼルシヤフト 純粋な半導体材料の製法及びその装置
JPS6074509A (ja) * 1983-09-30 1985-04-26 Hitachi Ltd 常圧ｃｖｄ装置
JP2010030878A (ja) * 2008-06-24 2010-02-12 Mitsubishi Materials Corp 多結晶シリコン製造装置

Also Published As

Publication number Publication date
DE2912661C2 (de) 1982-06-24
US4311545A (en) 1982-01-19
JPS5712288B2 (enExample) 1982-03-10
NL8001059A (nl) 1980-10-02
IT8048284A0 (it) 1980-03-28
DE2912661A1 (de) 1980-10-09
IT1143192B (it) 1986-10-22

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