JPS55130897A - Silicon single crystal - Google Patents
Silicon single crystalInfo
- Publication number
- JPS55130897A JPS55130897A JP3685579A JP3685579A JPS55130897A JP S55130897 A JPS55130897 A JP S55130897A JP 3685579 A JP3685579 A JP 3685579A JP 3685579 A JP3685579 A JP 3685579A JP S55130897 A JPS55130897 A JP S55130897A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon single
- silicon
- crystal
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3685579A JPS55130897A (en) | 1979-03-30 | 1979-03-30 | Silicon single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3685579A JPS55130897A (en) | 1979-03-30 | 1979-03-30 | Silicon single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55130897A true JPS55130897A (en) | 1980-10-11 |
Family
ID=12481390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3685579A Pending JPS55130897A (en) | 1979-03-30 | 1979-03-30 | Silicon single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55130897A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57129898A (en) * | 1980-12-19 | 1982-08-12 | Siemens Ag | Crucible-free zone melting process |
JPS58151393A (ja) * | 1982-02-26 | 1983-09-08 | Fujitsu Ltd | シリコン結晶の製造方法 |
JPS6094722A (ja) * | 1983-08-16 | 1985-05-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | シリコン・ウエハ |
JPS62162692A (ja) * | 1986-01-10 | 1987-07-18 | Fujitsu Ltd | シリコン結晶製造方法 |
US20080070335A1 (en) * | 1998-09-04 | 2008-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of Fabricating A Semiconductor Device |
-
1979
- 1979-03-30 JP JP3685579A patent/JPS55130897A/ja active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57129898A (en) * | 1980-12-19 | 1982-08-12 | Siemens Ag | Crucible-free zone melting process |
JPH0348159B2 (ja) * | 1980-12-19 | 1991-07-23 | Siemens Ag | |
JPS58151393A (ja) * | 1982-02-26 | 1983-09-08 | Fujitsu Ltd | シリコン結晶の製造方法 |
JPH021119B2 (ja) * | 1982-02-26 | 1990-01-10 | Fujitsu Ltd | |
JPS6094722A (ja) * | 1983-08-16 | 1985-05-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | シリコン・ウエハ |
JPS62162692A (ja) * | 1986-01-10 | 1987-07-18 | Fujitsu Ltd | シリコン結晶製造方法 |
US20080070335A1 (en) * | 1998-09-04 | 2008-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of Fabricating A Semiconductor Device |
US9070604B2 (en) * | 1998-09-04 | 2015-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
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