JPS55128874A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS55128874A
JPS55128874A JP3722879A JP3722879A JPS55128874A JP S55128874 A JPS55128874 A JP S55128874A JP 3722879 A JP3722879 A JP 3722879A JP 3722879 A JP3722879 A JP 3722879A JP S55128874 A JPS55128874 A JP S55128874A
Authority
JP
Japan
Prior art keywords
semiconductor memory
approx
drain
reliability
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3722879A
Other languages
Japanese (ja)
Inventor
Yasuki Rai
Hiromi Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP3722879A priority Critical patent/JPS55128874A/en
Publication of JPS55128874A publication Critical patent/JPS55128874A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To improve the reliability of a semiconductor memory by forming floating gates with short stripped metal conductors independently formed each other in parallel with a source and a drain thereof. CONSTITUTION:A floating gate 6 reaches at both ends through an insulating film 5 layers 2, 3 in parallel with the directions of a source 2 and a drain 3, and made of short stripped conductors 61, 62... formed independently each other. The conductor has approx. 1mu wide and approx. 0.5mu of interval. Even if pin-hole is existed at a thin insulating film 5 according to this configuration, only the conductor corresponding to the pin-hole becomes improper, but memory function is not lose as a whole to improve the reliability of the memory.
JP3722879A 1979-03-28 1979-03-28 Semiconductor memory Pending JPS55128874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3722879A JPS55128874A (en) 1979-03-28 1979-03-28 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3722879A JPS55128874A (en) 1979-03-28 1979-03-28 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS55128874A true JPS55128874A (en) 1980-10-06

Family

ID=12491735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3722879A Pending JPS55128874A (en) 1979-03-28 1979-03-28 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS55128874A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132283A (en) * 1974-09-13 1976-03-18 Mitsubishi Electric Corp DENKAI KOKATORAN JISUTA

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132283A (en) * 1974-09-13 1976-03-18 Mitsubishi Electric Corp DENKAI KOKATORAN JISUTA

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