JPS55121677A - Semiconductor controlled rectifier - Google Patents

Semiconductor controlled rectifier

Info

Publication number
JPS55121677A
JPS55121677A JP2867279A JP2867279A JPS55121677A JP S55121677 A JPS55121677 A JP S55121677A JP 2867279 A JP2867279 A JP 2867279A JP 2867279 A JP2867279 A JP 2867279A JP S55121677 A JPS55121677 A JP S55121677A
Authority
JP
Japan
Prior art keywords
layer
gate
electrode
wires
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2867279A
Other languages
Japanese (ja)
Inventor
Katsumi Akabane
Junichi Takita
Yoichi Nakajima
Takeshi Suzuki
Isao Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2867279A priority Critical patent/JPS55121677A/en
Publication of JPS55121677A publication Critical patent/JPS55121677A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308Gate electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To enhance the reliability of a semiconductor controlled rectifier by disposing gate lead wires at edge side of a semiconductor substrate outer than gate electrodes, connecting the parts of the wires to parts of the gate electrodes provided between the wires and an nE layer and the other parts of the wires to a pB layer. CONSTITUTION:A gate electrode 11A is formed in flat E shape, a gate lead wire 10 is contacted in low resistance with the central projection M of the gate electrode 11A substantially at the center, and the residual portion thereof is welded to a pB layer 4 at both sides of the central projection M. Since a gate current is thus flown from the wire 10 through the projection M of the electrode 11A to the entire opposite portion of the electrode 11A and to the layer 4, it can reduce the resistance of the layer 4 portion between the wire 10 and the electrode 11A to the ignorable degree.
JP2867279A 1979-03-14 1979-03-14 Semiconductor controlled rectifier Pending JPS55121677A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2867279A JPS55121677A (en) 1979-03-14 1979-03-14 Semiconductor controlled rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2867279A JPS55121677A (en) 1979-03-14 1979-03-14 Semiconductor controlled rectifier

Publications (1)

Publication Number Publication Date
JPS55121677A true JPS55121677A (en) 1980-09-18

Family

ID=12254986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2867279A Pending JPS55121677A (en) 1979-03-14 1979-03-14 Semiconductor controlled rectifier

Country Status (1)

Country Link
JP (1) JPS55121677A (en)

Similar Documents

Publication Publication Date Title
JPS57100770A (en) Switching element
JPS55121677A (en) Semiconductor controlled rectifier
JPS5661170A (en) Preparation of field effect transistor
JPS5643816A (en) Structure of bonding pad part
JPS56100436A (en) Manufacture of semiconductor element
JPS5348671A (en) Electrode structure of semiconductor element
JPS5740943A (en) Semiconductror device
JPS57114277A (en) Semiconductor device
JPS57111041A (en) Semiconductor device
JPS5791566A (en) Solar battery element
JPS55154757A (en) Smiconductor device and manufacture of the same
JPS5322364A (en) Semi conductor element sealing package
JPS5521184A (en) Method of manufacturing schottky barrier-gate type electric field effect transistor
JPS5779628A (en) Hybrid integrated circuit
JPS5710954A (en) Semiconductor device
JPS6422062A (en) Transistor
JPS57120387A (en) Light emitting semiconductor device
JPS57201059A (en) Semiconductor element
JPS56133881A (en) Mis type photoelectric transducer
JPS57177546A (en) Semiconductor diode
JPS5793571A (en) Semiconductor device
JPH01276656A (en) Resin sealed semiconductor
JPS52132789A (en) Manufacture for supersonic vibrator
JPS5793538A (en) Semiconductor device
JPS5298470A (en) Production of semiconductor element