JPS55121677A - Semiconductor controlled rectifier - Google Patents
Semiconductor controlled rectifierInfo
- Publication number
- JPS55121677A JPS55121677A JP2867279A JP2867279A JPS55121677A JP S55121677 A JPS55121677 A JP S55121677A JP 2867279 A JP2867279 A JP 2867279A JP 2867279 A JP2867279 A JP 2867279A JP S55121677 A JPS55121677 A JP S55121677A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- electrode
- wires
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To enhance the reliability of a semiconductor controlled rectifier by disposing gate lead wires at edge side of a semiconductor substrate outer than gate electrodes, connecting the parts of the wires to parts of the gate electrodes provided between the wires and an nE layer and the other parts of the wires to a pB layer. CONSTITUTION:A gate electrode 11A is formed in flat E shape, a gate lead wire 10 is contacted in low resistance with the central projection M of the gate electrode 11A substantially at the center, and the residual portion thereof is welded to a pB layer 4 at both sides of the central projection M. Since a gate current is thus flown from the wire 10 through the projection M of the electrode 11A to the entire opposite portion of the electrode 11A and to the layer 4, it can reduce the resistance of the layer 4 portion between the wire 10 and the electrode 11A to the ignorable degree.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2867279A JPS55121677A (en) | 1979-03-14 | 1979-03-14 | Semiconductor controlled rectifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2867279A JPS55121677A (en) | 1979-03-14 | 1979-03-14 | Semiconductor controlled rectifier |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55121677A true JPS55121677A (en) | 1980-09-18 |
Family
ID=12254986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2867279A Pending JPS55121677A (en) | 1979-03-14 | 1979-03-14 | Semiconductor controlled rectifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55121677A (en) |
-
1979
- 1979-03-14 JP JP2867279A patent/JPS55121677A/en active Pending
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