JPS55118652A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55118652A JPS55118652A JP2511679A JP2511679A JPS55118652A JP S55118652 A JPS55118652 A JP S55118652A JP 2511679 A JP2511679 A JP 2511679A JP 2511679 A JP2511679 A JP 2511679A JP S55118652 A JPS55118652 A JP S55118652A
- Authority
- JP
- Japan
- Prior art keywords
- film
- aluminum
- intermediate insulating
- hole
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2511679A JPS55118652A (en) | 1979-03-06 | 1979-03-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2511679A JPS55118652A (en) | 1979-03-06 | 1979-03-06 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55118652A true JPS55118652A (en) | 1980-09-11 |
Family
ID=12156950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2511679A Pending JPS55118652A (en) | 1979-03-06 | 1979-03-06 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55118652A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5313100A (en) * | 1991-04-26 | 1994-05-17 | Mitsubishi Denki Kabushiki Kaisha | Multilayer interconnection structure for a semiconductor device |
-
1979
- 1979-03-06 JP JP2511679A patent/JPS55118652A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5712140A (en) * | 1991-04-19 | 1998-01-27 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing interconnection structure of a semiconductor device |
US5313100A (en) * | 1991-04-26 | 1994-05-17 | Mitsubishi Denki Kabushiki Kaisha | Multilayer interconnection structure for a semiconductor device |
US5475267A (en) * | 1991-04-26 | 1995-12-12 | Mitsubishi Denki Kabushiki Kaisha | Multilayer interconnection structure for a semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57176746A (en) | Semiconductor integrated circuit and manufacture thereof | |
JPS55163860A (en) | Manufacture of semiconductor device | |
KR880013239A (ko) | 반도체소자의 접속구멍형성 방법 | |
KR930020590A (ko) | 알루미늄을 주성분으로 하는 금속박막의 에칭방법 및 박막트랜지스터의 제조방법 | |
JPS55118652A (en) | Manufacture of semiconductor device | |
JPS5518056A (en) | Semiconductor device | |
JPS5759359A (en) | Manufacture of semiconductor device | |
JPS57145340A (en) | Manufacture of semiconductor device | |
JPS57149752A (en) | Structure of multilayer wiring | |
JPS55154750A (en) | Manufacture of semiconductor device | |
JPS56161656A (en) | Manufacture of semiconductor device | |
JPS57208160A (en) | Semiconductor device | |
JPS56161655A (en) | Multilayer aluminum wiring for semiconductor device | |
JPS5718327A (en) | Production of semiconductor device | |
JPS57166048A (en) | Semiconductor integrated circuit | |
JPS56104450A (en) | Manufacture of semiconductor device | |
JPS572545A (en) | Manufacture of semiconductor device | |
JPS575329A (en) | Manufacture of semiconductor device | |
JPS56144553A (en) | Manufacture of semiconductor device | |
JPS6484735A (en) | Manufacture of semiconductor device | |
JPS5789242A (en) | Fabrication of semiconductor device | |
JPS56157047A (en) | Manufacture of multilayer wiring in semiconductor device | |
JPS58210168A (ja) | 二層膜のエツチング方法 | |
JPS56130951A (en) | Manufacture of semiconductor device | |
JPS56164530A (en) | Formation of contacting hole of semiconductor device |