JPS55117284A - Fabrication of semiconductor device - Google Patents

Fabrication of semiconductor device

Info

Publication number
JPS55117284A
JPS55117284A JP2465279A JP2465279A JPS55117284A JP S55117284 A JPS55117284 A JP S55117284A JP 2465279 A JP2465279 A JP 2465279A JP 2465279 A JP2465279 A JP 2465279A JP S55117284 A JPS55117284 A JP S55117284A
Authority
JP
Japan
Prior art keywords
voltage
type
depth
ion
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2465279A
Other languages
Japanese (ja)
Other versions
JPS6321355B2 (en
Inventor
Kiyokazu Inoue
Makio Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP2465279A priority Critical patent/JPS55117284A/en
Publication of JPS55117284A publication Critical patent/JPS55117284A/en
Publication of JPS6321355B2 publication Critical patent/JPS6321355B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To provide a zener diode having high reliability by implanting ion into low density layer forming an emitter junction to form maximum low density portion in depth at 0.2mu from the surface of a substrate. CONSTITUTION:An n-type epitaxial layer 2 is laminated on a p-type silicon substrate 1, and separated via a p-type layer 3, and sequentially diffused to form a p<->-type layer 5 and an n-type layer 6 thereon. An insulating film 4 is perforated with opening to expose an emitter junction je, and B ion is implanted at predetermined voltage. Then, a protective film 8 is coated thereon, and annealed. The B ion is gauss distributed around the center of mean depth responsive to the acceleration voltage in depth direction. The drop voltage of the emitter junction is almost determined by the value of the p<+>-type density in the p<->-type layer 5, and the potential for occurring a zener breakdown is almost determined by the mean depth. When the mean depth is selected to higher than 0.2mu, the instability of the breakdown voltage due to protracted test in high temperature atmosphere is eliminated to provide a constant-voltage diode having high reliability without almost ageing change of breakdown voltage.
JP2465279A 1979-03-02 1979-03-02 Fabrication of semiconductor device Granted JPS55117284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2465279A JPS55117284A (en) 1979-03-02 1979-03-02 Fabrication of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2465279A JPS55117284A (en) 1979-03-02 1979-03-02 Fabrication of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55117284A true JPS55117284A (en) 1980-09-09
JPS6321355B2 JPS6321355B2 (en) 1988-05-06

Family

ID=12144063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2465279A Granted JPS55117284A (en) 1979-03-02 1979-03-02 Fabrication of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55117284A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103473A (en) * 1980-01-23 1981-08-18 New Japan Radio Co Ltd Semiconductor device
JPS62120085A (en) * 1985-11-20 1987-06-01 Sanyo Electric Co Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103473A (en) * 1980-01-23 1981-08-18 New Japan Radio Co Ltd Semiconductor device
JPS62120085A (en) * 1985-11-20 1987-06-01 Sanyo Electric Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6321355B2 (en) 1988-05-06

Similar Documents

Publication Publication Date Title
US3971059A (en) Complementary bipolar transistors having collector diffused isolation
JPS5691478A (en) Manufacture of punch-through type diode
JPS54100273A (en) Memory circuit and variable resistance element
GB923104A (en) Improvements in or relating to semiconductive devices
JPS55113358A (en) Semiconductor device
JPS55162255A (en) High voltage resistance resistor element
GB1470744A (en) Light emitting semi-conductor devices
JPS55117284A (en) Fabrication of semiconductor device
US4106043A (en) Zener diodes
JPS57169273A (en) Semiconductor device
JPS55162258A (en) Semiconductor memory device
JPS5583271A (en) Semiconductor device
JPS5623774A (en) Semiconductor device and its manufacture
JPS55162263A (en) Semiconductor device
JPS55140263A (en) Surge preventive circuit for bipolar integrated circuit
JPS5613761A (en) Preparation of semiconductor device
JPS572568A (en) Semiconductor device
JPS5615061A (en) Semiconductor memory device
JPS55103773A (en) Semiconductor device
JPS55128862A (en) Junction breakdown write-in type semiconductor memory device and method of fabricating the same
JPS5696852A (en) Semiconductor device
GB1536764A (en) Semiconductor devices
GB1568051A (en) Zener diodes
JPS5780765A (en) Semiconductor device
JPS5591866A (en) Manufacture of semiconductor device