JPS55113372A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS55113372A
JPS55113372A JP1980079A JP1980079A JPS55113372A JP S55113372 A JPS55113372 A JP S55113372A JP 1980079 A JP1980079 A JP 1980079A JP 1980079 A JP1980079 A JP 1980079A JP S55113372 A JPS55113372 A JP S55113372A
Authority
JP
Japan
Prior art keywords
film
schottky barrier
constitution
barrier
sbd2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1980079A
Other languages
Japanese (ja)
Inventor
Yasushi Hatta
Minoru Enomoto
Tatsuo Itagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1980079A priority Critical patent/JPS55113372A/en
Publication of JPS55113372A publication Critical patent/JPS55113372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain more effective utilization of Schottky barrier diode in case of necessity thereof which needs lower forward voltage by a constitution wherein two kinds of Schottky barrier diodes which have different barrier height with each other are formed on a single semiconductor chip. CONSTITUTION:On a part of the oxide film 5 which lies on a n<->-type epitaxial semiconductor layer 1, the opening for contact is provided and a Pt film 6 is applied on the over all surface. Next thereto Pt on the film 5 is removed after the formation of the Pt-Si barrier 2 on the surface of the substrate. Next thereto on the other part of the film 5 the contact hole 8 is formed. Next thereto the TiW film 3 is applied on the overall surface and next thereto the Al film 4 is applied. And next thereto the expected Al electrode is formed by photo etching and thus two kinds of Schottky barrier diodes SBD1 and SBD2 are completed. By this constitution, the barrier height phiB is estimated to be 0.85-0.87eV for SBD1, and 0.70-0.50eV for SBD2 and the Schottky barrier diode of lower phiB than that made of Pt-Si is made available.
JP1980079A 1979-02-23 1979-02-23 Semiconductor device and its manufacture Pending JPS55113372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1980079A JPS55113372A (en) 1979-02-23 1979-02-23 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1980079A JPS55113372A (en) 1979-02-23 1979-02-23 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS55113372A true JPS55113372A (en) 1980-09-01

Family

ID=12009414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1980079A Pending JPS55113372A (en) 1979-02-23 1979-02-23 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS55113372A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119757A (en) * 1982-12-20 1984-07-11 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Integrated circuit and method of producing same
US4898838A (en) * 1985-10-16 1990-02-06 Texas Instruments Incorporated Method for fabricating a poly emitter logic array
US4982244A (en) * 1982-12-20 1991-01-01 National Semiconductor Corporation Buried Schottky clamped transistor
US5140383A (en) * 1989-01-19 1992-08-18 Texas Instruments Incorporated Method for fabricating a buried Schottky logic array and apparatus produced thereby
US5154514A (en) * 1991-08-29 1992-10-13 International Business Machines Corporation On-chip temperature sensor utilizing a Schottky barrier diode structure
US5200349A (en) * 1980-12-30 1993-04-06 Fujitsu Limited Semiconductor device including schotky gate of silicide and method for the manufacture of the same
US5416354A (en) * 1989-01-06 1995-05-16 Unitrode Corporation Inverted epitaxial process semiconductor devices
US5536967A (en) * 1980-12-30 1996-07-16 Fujitsu Limited Semiconductor device including Schottky gate of silicide and method for the manufacture of the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5055278A (en) * 1973-09-12 1975-05-15
JPS51111084A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device manufucturing proceso

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5055278A (en) * 1973-09-12 1975-05-15
JPS51111084A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device manufucturing proceso

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200349A (en) * 1980-12-30 1993-04-06 Fujitsu Limited Semiconductor device including schotky gate of silicide and method for the manufacture of the same
US5536967A (en) * 1980-12-30 1996-07-16 Fujitsu Limited Semiconductor device including Schottky gate of silicide and method for the manufacture of the same
JPS59119757A (en) * 1982-12-20 1984-07-11 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Integrated circuit and method of producing same
US4982244A (en) * 1982-12-20 1991-01-01 National Semiconductor Corporation Buried Schottky clamped transistor
US4898838A (en) * 1985-10-16 1990-02-06 Texas Instruments Incorporated Method for fabricating a poly emitter logic array
US5416354A (en) * 1989-01-06 1995-05-16 Unitrode Corporation Inverted epitaxial process semiconductor devices
US5140383A (en) * 1989-01-19 1992-08-18 Texas Instruments Incorporated Method for fabricating a buried Schottky logic array and apparatus produced thereby
US5154514A (en) * 1991-08-29 1992-10-13 International Business Machines Corporation On-chip temperature sensor utilizing a Schottky barrier diode structure

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