JPS5510985B2 - - Google Patents
Info
- Publication number
- JPS5510985B2 JPS5510985B2 JP7127476A JP7127476A JPS5510985B2 JP S5510985 B2 JPS5510985 B2 JP S5510985B2 JP 7127476 A JP7127476 A JP 7127476A JP 7127476 A JP7127476 A JP 7127476A JP S5510985 B2 JPS5510985 B2 JP S5510985B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H10P30/21—
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- H10P14/6312—
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- H10P30/206—
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- H10P30/226—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
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- H10P14/6324—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/084—Ion implantation of compound devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
- Y10S205/92—Electrolytic coating of circuit board or printed circuit, other than selected area coating
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/591,996 US4080721A (en) | 1975-06-30 | 1975-06-30 | Fabrication of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS526087A JPS526087A (en) | 1977-01-18 |
| JPS5510985B2 true JPS5510985B2 (cg-RX-API-DMAC10.html) | 1980-03-21 |
Family
ID=24368832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51071274A Granted JPS526087A (en) | 1975-06-30 | 1976-06-18 | Insb semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4080721A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS526087A (cg-RX-API-DMAC10.html) |
| CA (1) | CA1061015A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2628406A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2316727A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1488329A (cg-RX-API-DMAC10.html) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4177298A (en) * | 1977-03-22 | 1979-12-04 | Hitachi, Ltd. | Method for producing an InSb thin film element |
| DE2755418A1 (de) * | 1977-12-13 | 1979-06-21 | Bosch Gmbh Robert | Verfahren zur herstellung eines halbleiter-bauelements |
| US4247373A (en) * | 1978-06-20 | 1981-01-27 | Matsushita Electric Industrial Co., Ltd. | Method of making semiconductor device |
| US4348473A (en) * | 1981-03-04 | 1982-09-07 | Xerox Corporation | Dry process for the production of microelectronic devices |
| JPS58108774A (ja) * | 1981-12-22 | 1983-06-28 | Citizen Watch Co Ltd | 薄膜トランジスタの製造方法 |
| US4519127A (en) * | 1983-02-28 | 1985-05-28 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of manufacturing a MESFET by controlling implanted peak surface dopants |
| FR2556135B1 (fr) * | 1983-12-02 | 1986-09-19 | Thomson Csf | Photo-diode a l'antimoniure d'indium et procede de fabrication |
| US4898834A (en) * | 1988-06-27 | 1990-02-06 | Amber Engineering, Inc. | Open-tube, benign-environment annealing method for compound semiconductors |
| US5143857A (en) * | 1988-11-07 | 1992-09-01 | Triquint Semiconductor, Inc. | Method of fabricating an electronic device with reduced susceptiblity to backgating effects |
| GB2331841A (en) * | 1997-11-28 | 1999-06-02 | Secr Defence | Field effect transistor |
| US6194295B1 (en) * | 1999-05-17 | 2001-02-27 | National Science Council Of Republic Of China | Production of a refractory metal by chemical vapor deposition of a bilayer-stacked tungsten metal |
| US7687256B2 (en) * | 2002-04-11 | 2010-03-30 | Spire Corporation | Surface activated biochip |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3099776A (en) * | 1960-06-10 | 1963-07-30 | Texas Instruments Inc | Indium antimonide transistor |
| US3515956A (en) * | 1967-10-16 | 1970-06-02 | Ion Physics Corp | High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions |
| DE2041035C2 (de) * | 1970-08-18 | 1982-10-28 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum gleichzeitigen elektrolytischen in bezug auf die Sperrfähigkeit selektiven Behandeln von mehreren in einer gemeinsamen Halbleiterscheibe erzeugten gleichen Halbleiterbauelementen |
| US3929589A (en) * | 1974-02-08 | 1975-12-30 | Bell Telephone Labor Inc | Selective area oxidation of III-V compound semiconductors |
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1975
- 1975-06-30 US US05/591,996 patent/US4080721A/en not_active Expired - Lifetime
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1976
- 1976-05-21 FR FR7616136A patent/FR2316727A1/fr active Granted
- 1976-05-24 GB GB21374/76A patent/GB1488329A/en not_active Expired
- 1976-06-04 CA CA254,110A patent/CA1061015A/en not_active Expired
- 1976-06-18 JP JP51071274A patent/JPS526087A/ja active Granted
- 1976-06-24 DE DE19762628406 patent/DE2628406A1/de not_active Withdrawn
Non-Patent Citations (2)
| Title |
|---|
| ION IMPLANTATION=1971 * |
| JOURNAL OF APPLIED PHYSICS=1970 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1061015A (en) | 1979-08-21 |
| DE2628406A1 (de) | 1977-02-03 |
| FR2316727B1 (cg-RX-API-DMAC10.html) | 1978-08-25 |
| FR2316727A1 (fr) | 1977-01-28 |
| GB1488329A (en) | 1977-10-12 |
| US4080721A (en) | 1978-03-28 |
| JPS526087A (en) | 1977-01-18 |