FR2316727B1 - - Google Patents

Info

Publication number
FR2316727B1
FR2316727B1 FR7616136A FR7616136A FR2316727B1 FR 2316727 B1 FR2316727 B1 FR 2316727B1 FR 7616136 A FR7616136 A FR 7616136A FR 7616136 A FR7616136 A FR 7616136A FR 2316727 B1 FR2316727 B1 FR 2316727B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7616136A
Other languages
French (fr)
Other versions
FR2316727A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2316727A1 publication Critical patent/FR2316727A1/fr
Application granted granted Critical
Publication of FR2316727B1 publication Critical patent/FR2316727B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P30/21—
    • H10P14/6312—
    • H10P30/206—
    • H10P30/226—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10P14/6324—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
    • Y10S205/92—Electrolytic coating of circuit board or printed circuit, other than selected area coating
FR7616136A 1975-06-30 1976-05-21 Procede de fabrication de dispositifs semi-conducteurs dans un substrat d'antimoniure d'indium Granted FR2316727A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/591,996 US4080721A (en) 1975-06-30 1975-06-30 Fabrication of semiconductor device

Publications (2)

Publication Number Publication Date
FR2316727A1 FR2316727A1 (fr) 1977-01-28
FR2316727B1 true FR2316727B1 (cg-RX-API-DMAC10.html) 1978-08-25

Family

ID=24368832

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7616136A Granted FR2316727A1 (fr) 1975-06-30 1976-05-21 Procede de fabrication de dispositifs semi-conducteurs dans un substrat d'antimoniure d'indium

Country Status (6)

Country Link
US (1) US4080721A (cg-RX-API-DMAC10.html)
JP (1) JPS526087A (cg-RX-API-DMAC10.html)
CA (1) CA1061015A (cg-RX-API-DMAC10.html)
DE (1) DE2628406A1 (cg-RX-API-DMAC10.html)
FR (1) FR2316727A1 (cg-RX-API-DMAC10.html)
GB (1) GB1488329A (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177298A (en) * 1977-03-22 1979-12-04 Hitachi, Ltd. Method for producing an InSb thin film element
DE2755418A1 (de) * 1977-12-13 1979-06-21 Bosch Gmbh Robert Verfahren zur herstellung eines halbleiter-bauelements
US4247373A (en) * 1978-06-20 1981-01-27 Matsushita Electric Industrial Co., Ltd. Method of making semiconductor device
US4348473A (en) * 1981-03-04 1982-09-07 Xerox Corporation Dry process for the production of microelectronic devices
JPS58108774A (ja) * 1981-12-22 1983-06-28 Citizen Watch Co Ltd 薄膜トランジスタの製造方法
US4519127A (en) * 1983-02-28 1985-05-28 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacturing a MESFET by controlling implanted peak surface dopants
FR2556135B1 (fr) * 1983-12-02 1986-09-19 Thomson Csf Photo-diode a l'antimoniure d'indium et procede de fabrication
US4898834A (en) * 1988-06-27 1990-02-06 Amber Engineering, Inc. Open-tube, benign-environment annealing method for compound semiconductors
US5143857A (en) * 1988-11-07 1992-09-01 Triquint Semiconductor, Inc. Method of fabricating an electronic device with reduced susceptiblity to backgating effects
GB2331841A (en) * 1997-11-28 1999-06-02 Secr Defence Field effect transistor
US6194295B1 (en) * 1999-05-17 2001-02-27 National Science Council Of Republic Of China Production of a refractory metal by chemical vapor deposition of a bilayer-stacked tungsten metal
US7687256B2 (en) * 2002-04-11 2010-03-30 Spire Corporation Surface activated biochip

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3099776A (en) * 1960-06-10 1963-07-30 Texas Instruments Inc Indium antimonide transistor
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
DE2041035C2 (de) * 1970-08-18 1982-10-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum gleichzeitigen elektrolytischen in bezug auf die Sperrfähigkeit selektiven Behandeln von mehreren in einer gemeinsamen Halbleiterscheibe erzeugten gleichen Halbleiterbauelementen
US3929589A (en) * 1974-02-08 1975-12-30 Bell Telephone Labor Inc Selective area oxidation of III-V compound semiconductors

Also Published As

Publication number Publication date
CA1061015A (en) 1979-08-21
DE2628406A1 (de) 1977-02-03
FR2316727A1 (fr) 1977-01-28
GB1488329A (en) 1977-10-12
US4080721A (en) 1978-03-28
JPS5510985B2 (cg-RX-API-DMAC10.html) 1980-03-21
JPS526087A (en) 1977-01-18

Similar Documents

Publication Publication Date Title
JPS5510985B2 (cg-RX-API-DMAC10.html)
CH596913A5 (cg-RX-API-DMAC10.html)
CH596672A5 (cg-RX-API-DMAC10.html)
BG21942A2 (cg-RX-API-DMAC10.html)
BG22485A1 (cg-RX-API-DMAC10.html)
BG22914A1 (cg-RX-API-DMAC10.html)
BG22925A1 (cg-RX-API-DMAC10.html)
BG23122A1 (cg-RX-API-DMAC10.html)
CH1020375A4 (cg-RX-API-DMAC10.html)
CH472175A4 (cg-RX-API-DMAC10.html)
CH580023A5 (cg-RX-API-DMAC10.html)
CH580784A5 (cg-RX-API-DMAC10.html)
CH581783A5 (cg-RX-API-DMAC10.html)
CH582324A5 (cg-RX-API-DMAC10.html)
CH582505A5 (cg-RX-API-DMAC10.html)
CH584580A5 (cg-RX-API-DMAC10.html)
CH586056A5 (cg-RX-API-DMAC10.html)
CH586526A5 (cg-RX-API-DMAC10.html)
CH587736A5 (cg-RX-API-DMAC10.html)
CH589825A5 (cg-RX-API-DMAC10.html)
CH590354A5 (cg-RX-API-DMAC10.html)
CH591324A5 (cg-RX-API-DMAC10.html)
CH591678A5 (cg-RX-API-DMAC10.html)
CH591742A5 (cg-RX-API-DMAC10.html)
CH591970A5 (cg-RX-API-DMAC10.html)

Legal Events

Date Code Title Description
ST Notification of lapse