JPS55108992A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55108992A
JPS55108992A JP1639979A JP1639979A JPS55108992A JP S55108992 A JPS55108992 A JP S55108992A JP 1639979 A JP1639979 A JP 1639979A JP 1639979 A JP1639979 A JP 1639979A JP S55108992 A JPS55108992 A JP S55108992A
Authority
JP
Japan
Prior art keywords
read
cell
write
line
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1639979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6151358B2 (enrdf_load_stackoverflow
Inventor
Joji Nokubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1639979A priority Critical patent/JPS55108992A/ja
Publication of JPS55108992A publication Critical patent/JPS55108992A/ja
Publication of JPS6151358B2 publication Critical patent/JPS6151358B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP1639979A 1979-02-15 1979-02-15 Semiconductor memory device Granted JPS55108992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1639979A JPS55108992A (en) 1979-02-15 1979-02-15 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1639979A JPS55108992A (en) 1979-02-15 1979-02-15 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS55108992A true JPS55108992A (en) 1980-08-21
JPS6151358B2 JPS6151358B2 (enrdf_load_stackoverflow) 1986-11-08

Family

ID=11915161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1639979A Granted JPS55108992A (en) 1979-02-15 1979-02-15 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55108992A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4479294A (en) * 1981-08-27 1984-10-30 Nissan Motor Company, Limited Secondary working apparatus
US4483055A (en) * 1981-08-27 1984-11-20 Nissan Motor Company, Limited Secondary working apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046454A (enrdf_load_stackoverflow) * 1973-08-06 1975-04-25
JPS5362434A (en) * 1976-11-16 1978-06-03 Mitsubishi Electric Corp C-mos memory element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046454A (enrdf_load_stackoverflow) * 1973-08-06 1975-04-25
JPS5362434A (en) * 1976-11-16 1978-06-03 Mitsubishi Electric Corp C-mos memory element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4479294A (en) * 1981-08-27 1984-10-30 Nissan Motor Company, Limited Secondary working apparatus
US4483055A (en) * 1981-08-27 1984-11-20 Nissan Motor Company, Limited Secondary working apparatus

Also Published As

Publication number Publication date
JPS6151358B2 (enrdf_load_stackoverflow) 1986-11-08

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