JPS5498115A - Solid image pickup unit - Google Patents

Solid image pickup unit

Info

Publication number
JPS5498115A
JPS5498115A JP509078A JP509078A JPS5498115A JP S5498115 A JPS5498115 A JP S5498115A JP 509078 A JP509078 A JP 509078A JP 509078 A JP509078 A JP 509078A JP S5498115 A JPS5498115 A JP S5498115A
Authority
JP
Japan
Prior art keywords
layer
potential
diffusion layer
lowered
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP509078A
Other languages
Japanese (ja)
Inventor
Takamichi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP509078A priority Critical patent/JPS5498115A/en
Publication of JPS5498115A publication Critical patent/JPS5498115A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE: To improve the sensitivity for blue light by sensing light by the surface of the Si substrate under a transparent electrode in a solid image pickup unit.
CONSTITUTION: When voltage VG is applied to the gate of MOS transistor 9 in pulses, a depletion layer is formed on the surface of Si substrate under transparent electrode 4 becuase poly-Si gate 8 is connected to drain diffusion layer 7. Carrier is accumulated in the depletion layer by the light irradiated through transparent electrode 4. Since this carrier is flowed to source diffusion layer 6 and the potential of layer 6 is lowered, charge from drain diffusion layer 7 is flowed. Then, since the potential of layer 7 is lowered, the potential of transparnt electrode 4 is lowered to exhaust the carrier of the depletion layer. On a basis of the operation above, optical signals are accumulated as potential change components of drain diffusion layer 7, and signals can be taken out to the external by applying the voltage to gate 11 in pulses.
COPYRIGHT: (C)1979,JPO&Japio
JP509078A 1978-01-19 1978-01-19 Solid image pickup unit Pending JPS5498115A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP509078A JPS5498115A (en) 1978-01-19 1978-01-19 Solid image pickup unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP509078A JPS5498115A (en) 1978-01-19 1978-01-19 Solid image pickup unit

Publications (1)

Publication Number Publication Date
JPS5498115A true JPS5498115A (en) 1979-08-02

Family

ID=11601685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP509078A Pending JPS5498115A (en) 1978-01-19 1978-01-19 Solid image pickup unit

Country Status (1)

Country Link
JP (1) JPS5498115A (en)

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