JPS5493977A - Schottky diode - Google Patents
Schottky diodeInfo
- Publication number
- JPS5493977A JPS5493977A JP38378A JP38378A JPS5493977A JP S5493977 A JPS5493977 A JP S5493977A JP 38378 A JP38378 A JP 38378A JP 38378 A JP38378 A JP 38378A JP S5493977 A JPS5493977 A JP S5493977A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistor
- oxide film
- type
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To improve characteristic and reliability by using native oxide as an oxide film in a Schottky diode using gallium arsenide (GaAs) crystal.
CONSTITUTION: N-type GaAs crystal grown 32 is prepared on GaAs n+-type substrate 31, and AuGe alloy is evaporated to the reverse face to form ohmic electrode 35. The surface of grown layer 32 is covered with a positive-type resistor and is used as a mask to form anode oxide film 33. After removing the resistor above, Mo layer 34 and Au layer 36 are formed. The surface of Au layer 36 is covered with positive- type resistor 36a again and is used as a mask to remove Au layer 36 and MO layer 34 and expose anode oxide film 33, and at last, resistor 36a is removed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP38378A JPS5493977A (en) | 1978-01-07 | 1978-01-07 | Schottky diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP38378A JPS5493977A (en) | 1978-01-07 | 1978-01-07 | Schottky diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5493977A true JPS5493977A (en) | 1979-07-25 |
Family
ID=11472268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP38378A Pending JPS5493977A (en) | 1978-01-07 | 1978-01-07 | Schottky diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5493977A (en) |
-
1978
- 1978-01-07 JP JP38378A patent/JPS5493977A/en active Pending
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