JPS5493977A - Schottky diode - Google Patents

Schottky diode

Info

Publication number
JPS5493977A
JPS5493977A JP38378A JP38378A JPS5493977A JP S5493977 A JPS5493977 A JP S5493977A JP 38378 A JP38378 A JP 38378A JP 38378 A JP38378 A JP 38378A JP S5493977 A JPS5493977 A JP S5493977A
Authority
JP
Japan
Prior art keywords
layer
resistor
oxide film
type
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP38378A
Other languages
Japanese (ja)
Inventor
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP38378A priority Critical patent/JPS5493977A/en
Publication of JPS5493977A publication Critical patent/JPS5493977A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To improve characteristic and reliability by using native oxide as an oxide film in a Schottky diode using gallium arsenide (GaAs) crystal.
CONSTITUTION: N-type GaAs crystal grown 32 is prepared on GaAs n+-type substrate 31, and AuGe alloy is evaporated to the reverse face to form ohmic electrode 35. The surface of grown layer 32 is covered with a positive-type resistor and is used as a mask to form anode oxide film 33. After removing the resistor above, Mo layer 34 and Au layer 36 are formed. The surface of Au layer 36 is covered with positive- type resistor 36a again and is used as a mask to remove Au layer 36 and MO layer 34 and expose anode oxide film 33, and at last, resistor 36a is removed.
COPYRIGHT: (C)1979,JPO&Japio
JP38378A 1978-01-07 1978-01-07 Schottky diode Pending JPS5493977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP38378A JPS5493977A (en) 1978-01-07 1978-01-07 Schottky diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP38378A JPS5493977A (en) 1978-01-07 1978-01-07 Schottky diode

Publications (1)

Publication Number Publication Date
JPS5493977A true JPS5493977A (en) 1979-07-25

Family

ID=11472268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP38378A Pending JPS5493977A (en) 1978-01-07 1978-01-07 Schottky diode

Country Status (1)

Country Link
JP (1) JPS5493977A (en)

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