JPS5489476A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5489476A
JPS5489476A JP15832277A JP15832277A JPS5489476A JP S5489476 A JPS5489476 A JP S5489476A JP 15832277 A JP15832277 A JP 15832277A JP 15832277 A JP15832277 A JP 15832277A JP S5489476 A JPS5489476 A JP S5489476A
Authority
JP
Japan
Prior art keywords
film
wafer
implanted
time
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15832277A
Other languages
Japanese (ja)
Other versions
JPS617727B2 (en
Inventor
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15832277A priority Critical patent/JPS5489476A/en
Publication of JPS5489476A publication Critical patent/JPS5489476A/en
Publication of JPS617727B2 publication Critical patent/JPS617727B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obviate the occurrence of insulation breakdown in film despite high dose quantity by beforehand exposing the wafer by forming grooves in the film of the regions to be implanted at the time of implanting ions to the semicoductor wafer deposited with the insulation film.
CONSTITUTION: At the time of implanting ions into a semiconductor wafer 1 provided with insulation film 2 on the surface, grooves 2A are provided in the film 2 to dice the film 2 and expose the surface of the wafer to be implanted. At this time, provision of the films 2A in the position of the scribe lines to be provided later for the purpose of dicing the wafer to chips is convenient. If ions are implanted after these, the production of the insulation film in the stagnation of ion charges does not occur despite high dose quantity.
COPYRIGHT: (C)1979,JPO&Japio
JP15832277A 1977-12-27 1977-12-27 Production of semiconductor device Granted JPS5489476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15832277A JPS5489476A (en) 1977-12-27 1977-12-27 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15832277A JPS5489476A (en) 1977-12-27 1977-12-27 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5489476A true JPS5489476A (en) 1979-07-16
JPS617727B2 JPS617727B2 (en) 1986-03-08

Family

ID=15669096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15832277A Granted JPS5489476A (en) 1977-12-27 1977-12-27 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5489476A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278325A (en) * 1987-05-11 1988-11-16 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278325A (en) * 1987-05-11 1988-11-16 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS617727B2 (en) 1986-03-08

Similar Documents

Publication Publication Date Title
JPS52101990A (en) Semiconductor device for photoelectric transducer and its manufacture
JPS51127682A (en) Manufacturing process of semiconductor device
JPS5431273A (en) Manufacture of semiconductor device
JPS5591877A (en) Manufacture of semiconductor device
JPS53129591A (en) Production of semiconductor device
JPS5253658A (en) Method of introducing impurity into semiconductor
JPS5489476A (en) Production of semiconductor device
JPS5253673A (en) Device and production for semiconductor
JPS5367371A (en) Semiconductor device
JPS5441665A (en) Manufacture for semiconductor device
JPS51116675A (en) Manufacturing method for a semiconductor device
JPS5286779A (en) Semiconductor device
JPS5387679A (en) Semiconductor integrated circuit device
JPS5247677A (en) Process for production of semiconductor device
JPS5249781A (en) Process for production of semiconductor device
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS5374387A (en) Manufacture of semiconductor device
JPS51147272A (en) Manufacturing process of mis-type field effect transistor
JPS53137678A (en) Manufacture for mos type semiconductor device
JPS5423483A (en) Manufacture for semiconductor device
JPS5412566A (en) Production of semiconductor device
JPS51123558A (en) Manufacturing method of plate semiconductor
JPS5248480A (en) Vertical junction type field effect transistor
JPS52155069A (en) Production of field effect control type semiconductor device
JPS53129980A (en) Production of mos semiconductor device