JPS5478093A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5478093A JPS5478093A JP14463077A JP14463077A JPS5478093A JP S5478093 A JPS5478093 A JP S5478093A JP 14463077 A JP14463077 A JP 14463077A JP 14463077 A JP14463077 A JP 14463077A JP S5478093 A JPS5478093 A JP S5478093A
- Authority
- JP
- Japan
- Prior art keywords
- sio
- films
- poly
- crystal
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To eliminate the need for photoetching by forming a gate electrode and source and drain regions, plus an electrode extracting hole reaching them by selectively injecting ions from a slant direction using a step pattern provided to a Si substrate surface.
CONSTITUTION: On Si substrate 1, surface films 2 and 2' of SiO2, Si3N4, poly- crystal Si, or the like with an opening are formed, which are used as masks for injecting impurity ions 4 and 5 aslant from the upper part, thereby forming source region 6 and drain region 3. Through oxidation in a vaporous atmosphere, thick SiO2 films 7 and 9 on regions 6 and 3 and thin gate SiO2 film 8 are generated. Then, a non-dope poly-crystal Si layer is grown on the entire surface and ions 4' and 5' are injected aslant from the upper part, thereby making conductive parts except poly-crystal layer 11 used as a gate electrode. Next, this is oxidized and layers except layer 11 slow in oxidation are converted into thick SiO2 films 10 and 12. Then, wiring metal is adhered and etched, and electrode extraction wirings 17 and 18 are provided.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14463077A JPS5478093A (en) | 1977-12-03 | 1977-12-03 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14463077A JPS5478093A (en) | 1977-12-03 | 1977-12-03 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5478093A true JPS5478093A (en) | 1979-06-21 |
Family
ID=15366504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14463077A Pending JPS5478093A (en) | 1977-12-03 | 1977-12-03 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5478093A (en) |
-
1977
- 1977-12-03 JP JP14463077A patent/JPS5478093A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55153377A (en) | Production of semiconductor device | |
JPS5736842A (en) | Semiconductor integrated circuit device | |
JPS54108582A (en) | Manufacture of silicon type field effect transistor | |
JPS5444481A (en) | Mos type semiconductor device and its manufacture | |
JPS5710268A (en) | Semiconductor device | |
JPS5478093A (en) | Manufacture of semiconductor device | |
JPS56162873A (en) | Insulated gate type field effect semiconductor device | |
JPS55113344A (en) | Electrode wiring and its manufacture | |
JPS5485686A (en) | Semiconductor integrated circuit device | |
JPS5212587A (en) | Mis type semi-conductor integrated device and its production method | |
JPS53144686A (en) | Production of semiconductor device | |
JPS55162270A (en) | Semiconductor device | |
JPS577153A (en) | Preparation of semiconductor device | |
JPS5748248A (en) | Manufacture of semiconductor device | |
JPS55108772A (en) | Semiconductor integrated circuit device | |
JPS54143076A (en) | Semiconductor device and its manufacture | |
JPS52141580A (en) | Manufacture of mos-type semiconductor device | |
JPS5762559A (en) | Semiconductor device | |
JPS5489594A (en) | Manufacture for integrated circuit | |
JPS5739579A (en) | Mos semiconductor device and manufacture thereof | |
JPS5432981A (en) | Manufacture of longitudinal mos field effect transistor | |
JPS55132062A (en) | Semiconductor memory device | |
JPS5687346A (en) | Manufacture of semiconductor device | |
JPS57177525A (en) | Etching method for silicon oxide | |
JPS5491066A (en) | Field effect transistor of insulation gate type |