JPS5474385A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5474385A
JPS5474385A JP14177077A JP14177077A JPS5474385A JP S5474385 A JPS5474385 A JP S5474385A JP 14177077 A JP14177077 A JP 14177077A JP 14177077 A JP14177077 A JP 14177077A JP S5474385 A JPS5474385 A JP S5474385A
Authority
JP
Japan
Prior art keywords
semiconductor laser
crystal
film
sio
reflective surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14177077A
Other languages
Japanese (ja)
Other versions
JPS6034835B2 (en
Inventor
Tsunao Yuasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14177077A priority Critical patent/JPS6034835B2/en
Publication of JPS5474385A publication Critical patent/JPS5474385A/en
Publication of JPS6034835B2 publication Critical patent/JPS6034835B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the reflective surface of a semiconductor laser from deteriorating by covering the reflective surface with a SiO2 film and then by covering it with Al2O3 for forming a protective film.
CONSTITUTION: Plate-shaped crystal 3 is obtained by cleaving the semiconductor laser crystal of the striped GaAs-AlGaAs double-heterostructure formed by vapor- depositing Cr-Au-system metal electrode 1 on the p-type side surface of the semiconductor crystal and Au-Ge-Ni-system metal electrode 2 on the n-type side surface. On the cleaved surface of this plate crystal 3, i.e. reflective surface 4 of the semiconductor laser, a SiO2 film of 300Å in thickness is formed by being sputtered inan Ar atmosphere. On this SiO2 film, Al2O3 is sputtered to a thickness of 2300Å in an Ar-O2 atmosphere. After the sputtering, plate crystal 3 is cut into chips, thereby manufacturing semiconductor laser 5.
COPYRIGHT: (C)1979,JPO&Japio
JP14177077A 1977-11-26 1977-11-26 semiconductor laser Expired JPS6034835B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14177077A JPS6034835B2 (en) 1977-11-26 1977-11-26 semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14177077A JPS6034835B2 (en) 1977-11-26 1977-11-26 semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5474385A true JPS5474385A (en) 1979-06-14
JPS6034835B2 JPS6034835B2 (en) 1985-08-10

Family

ID=15299760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14177077A Expired JPS6034835B2 (en) 1977-11-26 1977-11-26 semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6034835B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6123381A (en) * 1984-07-11 1986-01-31 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6123381A (en) * 1984-07-11 1986-01-31 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser and manufacture thereof
JPH0358549B2 (en) * 1984-07-11 1991-09-05 Nippon Telegraph & Telephone

Also Published As

Publication number Publication date
JPS6034835B2 (en) 1985-08-10

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