JPS5474385A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5474385A JPS5474385A JP14177077A JP14177077A JPS5474385A JP S5474385 A JPS5474385 A JP S5474385A JP 14177077 A JP14177077 A JP 14177077A JP 14177077 A JP14177077 A JP 14177077A JP S5474385 A JPS5474385 A JP S5474385A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- crystal
- film
- sio
- reflective surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To prevent the reflective surface of a semiconductor laser from deteriorating by covering the reflective surface with a SiO2 film and then by covering it with Al2O3 for forming a protective film.
CONSTITUTION: Plate-shaped crystal 3 is obtained by cleaving the semiconductor laser crystal of the striped GaAs-AlGaAs double-heterostructure formed by vapor- depositing Cr-Au-system metal electrode 1 on the p-type side surface of the semiconductor crystal and Au-Ge-Ni-system metal electrode 2 on the n-type side surface. On the cleaved surface of this plate crystal 3, i.e. reflective surface 4 of the semiconductor laser, a SiO2 film of 300Å in thickness is formed by being sputtered inan Ar atmosphere. On this SiO2 film, Al2O3 is sputtered to a thickness of 2300Å in an Ar-O2 atmosphere. After the sputtering, plate crystal 3 is cut into chips, thereby manufacturing semiconductor laser 5.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14177077A JPS6034835B2 (en) | 1977-11-26 | 1977-11-26 | semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14177077A JPS6034835B2 (en) | 1977-11-26 | 1977-11-26 | semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5474385A true JPS5474385A (en) | 1979-06-14 |
JPS6034835B2 JPS6034835B2 (en) | 1985-08-10 |
Family
ID=15299760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14177077A Expired JPS6034835B2 (en) | 1977-11-26 | 1977-11-26 | semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6034835B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6123381A (en) * | 1984-07-11 | 1986-01-31 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser and manufacture thereof |
-
1977
- 1977-11-26 JP JP14177077A patent/JPS6034835B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6123381A (en) * | 1984-07-11 | 1986-01-31 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser and manufacture thereof |
JPH0358549B2 (en) * | 1984-07-11 | 1991-09-05 | Nippon Telegraph & Telephone |
Also Published As
Publication number | Publication date |
---|---|
JPS6034835B2 (en) | 1985-08-10 |
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