JPS54137991A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS54137991A
JPS54137991A JP4612978A JP4612978A JPS54137991A JP S54137991 A JPS54137991 A JP S54137991A JP 4612978 A JP4612978 A JP 4612978A JP 4612978 A JP4612978 A JP 4612978A JP S54137991 A JPS54137991 A JP S54137991A
Authority
JP
Japan
Prior art keywords
film
gaas
reflection surface
crystal
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4612978A
Other languages
Japanese (ja)
Inventor
Tsunao Yuasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4612978A priority Critical patent/JPS54137991A/en
Publication of JPS54137991A publication Critical patent/JPS54137991A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To stabilize the operation for a long time by covering the reflection surface of a GaAs-AlGaAs semiconductor laser with an amorphous or polycrystalline GaAs film of high resistivity and a SiO2 film applied onto it.
CONSTITUTION: The GaAs-AlGaAs double hetero-structure crystal is provided with striped conductive part 1 and electrode 2, to obtain laserware 3. Then, the crystal is cleaved in the direction perpendicular to stripes into laser crystal piece 5 with reflection surface 4 made of a cleavage surface and this electrode 2 is covered with a thin plate of stainless steel or Al. Next, polycrystalline or amorphous GaAs film 7 of high resistivity is applied onto exposed reflection surface 4 flush vapor-deposition maintaining a temperature between 200 and 300°C, and SiO2 film 8 is also adhered by sputtering in an Ar atmosphere. As a result, no quality-changed layer is produced at the interface between film 7 and reflection surface 4 and film 8 stops the ambient air from immersing in, thereby reducing the variation in characteristics.
COPYRIGHT: (C)1979,JPO&Japio
JP4612978A 1978-04-18 1978-04-18 Semiconductor laser Pending JPS54137991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4612978A JPS54137991A (en) 1978-04-18 1978-04-18 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4612978A JPS54137991A (en) 1978-04-18 1978-04-18 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS54137991A true JPS54137991A (en) 1979-10-26

Family

ID=12738368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4612978A Pending JPS54137991A (en) 1978-04-18 1978-04-18 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS54137991A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09186396A (en) * 1996-01-05 1997-07-15 Nec Corp Fabrication of semiconductor laser element
JP2008535224A (en) * 2005-03-25 2008-08-28 トルンプフ フォトニクス インコーポレイテッド Laser facet deactivation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09186396A (en) * 1996-01-05 1997-07-15 Nec Corp Fabrication of semiconductor laser element
US6080598A (en) * 1996-01-05 2000-06-27 Nec Corporation Method of producing semiconductor laser element with mirror degradation suppressed
JP2008535224A (en) * 2005-03-25 2008-08-28 トルンプフ フォトニクス インコーポレイテッド Laser facet deactivation

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