JPS54137991A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS54137991A JPS54137991A JP4612978A JP4612978A JPS54137991A JP S54137991 A JPS54137991 A JP S54137991A JP 4612978 A JP4612978 A JP 4612978A JP 4612978 A JP4612978 A JP 4612978A JP S54137991 A JPS54137991 A JP S54137991A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gaas
- reflection surface
- crystal
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To stabilize the operation for a long time by covering the reflection surface of a GaAs-AlGaAs semiconductor laser with an amorphous or polycrystalline GaAs film of high resistivity and a SiO2 film applied onto it.
CONSTITUTION: The GaAs-AlGaAs double hetero-structure crystal is provided with striped conductive part 1 and electrode 2, to obtain laserware 3. Then, the crystal is cleaved in the direction perpendicular to stripes into laser crystal piece 5 with reflection surface 4 made of a cleavage surface and this electrode 2 is covered with a thin plate of stainless steel or Al. Next, polycrystalline or amorphous GaAs film 7 of high resistivity is applied onto exposed reflection surface 4 flush vapor-deposition maintaining a temperature between 200 and 300°C, and SiO2 film 8 is also adhered by sputtering in an Ar atmosphere. As a result, no quality-changed layer is produced at the interface between film 7 and reflection surface 4 and film 8 stops the ambient air from immersing in, thereby reducing the variation in characteristics.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4612978A JPS54137991A (en) | 1978-04-18 | 1978-04-18 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4612978A JPS54137991A (en) | 1978-04-18 | 1978-04-18 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54137991A true JPS54137991A (en) | 1979-10-26 |
Family
ID=12738368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4612978A Pending JPS54137991A (en) | 1978-04-18 | 1978-04-18 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54137991A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09186396A (en) * | 1996-01-05 | 1997-07-15 | Nec Corp | Fabrication of semiconductor laser element |
JP2008535224A (en) * | 2005-03-25 | 2008-08-28 | トルンプフ フォトニクス インコーポレイテッド | Laser facet deactivation |
-
1978
- 1978-04-18 JP JP4612978A patent/JPS54137991A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09186396A (en) * | 1996-01-05 | 1997-07-15 | Nec Corp | Fabrication of semiconductor laser element |
US6080598A (en) * | 1996-01-05 | 2000-06-27 | Nec Corporation | Method of producing semiconductor laser element with mirror degradation suppressed |
JP2008535224A (en) * | 2005-03-25 | 2008-08-28 | トルンプフ フォトニクス インコーポレイテッド | Laser facet deactivation |
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