JPS546781A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS546781A JPS546781A JP7230777A JP7230777A JPS546781A JP S546781 A JPS546781 A JP S546781A JP 7230777 A JP7230777 A JP 7230777A JP 7230777 A JP7230777 A JP 7230777A JP S546781 A JPS546781 A JP S546781A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- sio
- secure
- providing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To secure an isolate formation of the element region along with the depletion layers holding the PN junction surface between, by providing the SiO2 isolation layer through the N layer surface on P-type Si layer containing N+ buried layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7230777A JPS546781A (en) | 1977-06-18 | 1977-06-18 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7230777A JPS546781A (en) | 1977-06-18 | 1977-06-18 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS546781A true JPS546781A (en) | 1979-01-19 |
Family
ID=13485471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7230777A Pending JPS546781A (en) | 1977-06-18 | 1977-06-18 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS546781A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4945629A (en) * | 1972-09-01 | 1974-05-01 |
-
1977
- 1977-06-18 JP JP7230777A patent/JPS546781A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4945629A (en) * | 1972-09-01 | 1974-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS542679A (en) | Nonvoltile semiconductor memory device | |
JPS53111285A (en) | Low crosstalk monolithic pnpn switch matrix by pn junction isolation method | |
JPS53142196A (en) | Bipolar type semiconductor device | |
JPS5240071A (en) | Semiconductor device | |
JPS5364471A (en) | Method of producing silicon nitride barrier on semiconductor substrate | |
JPS546781A (en) | Semiconductor device | |
JPS5371572A (en) | Manufacture of lateral pnp transistor | |
JPS5316586A (en) | Semiconductor device | |
JPS51116678A (en) | Semiconductor device | |
JPS5431289A (en) | Semiconductor device | |
JPS5341181A (en) | Semiconductor device | |
JPS53105385A (en) | Manufacture for semiconductor | |
JPS5434767A (en) | Formation method of n-type layer | |
JPS5339887A (en) | Production of semiconductor device | |
JPS5322384A (en) | Semiconductor device | |
JPS5376760A (en) | Semiconductor rectifying device | |
JPS5373081A (en) | Manufacture of mis-type semiconductor device | |
JPS547271A (en) | Semiconductor electrode structure | |
JPS5336482A (en) | Semiconductor device | |
JPS546471A (en) | Manufacture of semiconductor device | |
JPS5331982A (en) | Semiconductor device | |
JPS5326661A (en) | Manufacture of semiconductor device containing pn junction | |
JPS53100781A (en) | Semiconductor device | |
JPS526081A (en) | Semiconductor wafer | |
JPS543472A (en) | Manufacture of semiconductor device |