JPS546456A - Separating method into semiconductor pellet - Google Patents

Separating method into semiconductor pellet

Info

Publication number
JPS546456A
JPS546456A JP7110577A JP7110577A JPS546456A JP S546456 A JPS546456 A JP S546456A JP 7110577 A JP7110577 A JP 7110577A JP 7110577 A JP7110577 A JP 7110577A JP S546456 A JPS546456 A JP S546456A
Authority
JP
Japan
Prior art keywords
semiconductor pellet
separating method
sheet
pellet
reverse surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7110577A
Other languages
Japanese (ja)
Inventor
Tsutomu Mimata
Akira Kabashima
Suguru Ozoegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7110577A priority Critical patent/JPS546456A/en
Priority to DE19782826110 priority patent/DE2826110A1/en
Publication of JPS546456A publication Critical patent/JPS546456A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0052—Means for supporting or holding work during breaking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

PURPOSE: To pick up pellets by pushing up each pellet from the reverse surface of a sheet after pelletizing a substrate with its reverse surface made in hermitical contact with the sheet.
COPYRIGHT: (C)1979,JPO&Japio
JP7110577A 1977-06-17 1977-06-17 Separating method into semiconductor pellet Pending JPS546456A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7110577A JPS546456A (en) 1977-06-17 1977-06-17 Separating method into semiconductor pellet
DE19782826110 DE2826110A1 (en) 1977-06-17 1978-06-14 Pellet forming cutter for semiconductor wafer - has split grooved wafer adhesive bonded on foil for easy handling

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7110577A JPS546456A (en) 1977-06-17 1977-06-17 Separating method into semiconductor pellet

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP58222009A Division JPS59130439A (en) 1983-11-28 1983-11-28 Structure for holding plates to be separated
JP58222008A Division JPS59130438A (en) 1983-11-28 1983-11-28 Method for separating plates

Publications (1)

Publication Number Publication Date
JPS546456A true JPS546456A (en) 1979-01-18

Family

ID=13450928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7110577A Pending JPS546456A (en) 1977-06-17 1977-06-17 Separating method into semiconductor pellet

Country Status (2)

Country Link
JP (1) JPS546456A (en)
DE (1) DE2826110A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57148874U (en) * 1981-03-13 1982-09-18
JPH0555373A (en) * 1991-08-26 1993-03-05 Rohm Co Ltd Wafer cracking method and device
US5362681A (en) * 1992-07-22 1994-11-08 Anaglog Devices, Inc. Method for separating circuit dies from a wafer
CN102079015A (en) * 2010-11-25 2011-06-01 山东华光光电子有限公司 Laser-cutting method of GaAs-based LED (Light-Emitting Diode) chip

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387776A (en) * 1993-05-11 1995-02-07 General Electric Company Method of separation of pieces from super hard material by partial laser cut and pressure cleavage
JPH10305420A (en) 1997-03-04 1998-11-17 Ngk Insulators Ltd Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device
FR2775353A1 (en) * 1998-02-24 1999-08-27 Commissariat Energie Atomique Micro-milling cutter for machining miniaturized components
AT502233B1 (en) * 2001-06-07 2007-04-15 Thallner Erich Carrier detachment device aligns inner, near-edge surface of frame with semiconductor disk and bonds them to foil, before detaching disk from carrier

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57148874U (en) * 1981-03-13 1982-09-18
JPS6221037Y2 (en) * 1981-03-13 1987-05-28
JPH0555373A (en) * 1991-08-26 1993-03-05 Rohm Co Ltd Wafer cracking method and device
US5362681A (en) * 1992-07-22 1994-11-08 Anaglog Devices, Inc. Method for separating circuit dies from a wafer
CN102079015A (en) * 2010-11-25 2011-06-01 山东华光光电子有限公司 Laser-cutting method of GaAs-based LED (Light-Emitting Diode) chip

Also Published As

Publication number Publication date
DE2826110A1 (en) 1978-12-21

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