JPS59130438A - Method for separating plates - Google Patents
Method for separating platesInfo
- Publication number
- JPS59130438A JPS59130438A JP58222008A JP22200883A JPS59130438A JP S59130438 A JPS59130438 A JP S59130438A JP 58222008 A JP58222008 A JP 58222008A JP 22200883 A JP22200883 A JP 22200883A JP S59130438 A JPS59130438 A JP S59130438A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- pellets
- semiconductor
- sheet
- pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Abstract
Description
【発明の詳細な説明】
本発明は、半導体ウェーハ等の板状物の分離法に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for separating plate-like objects such as semiconductor wafers.
従来、半導体装置の製造にあたっては、シリコンなどの
半導体ウェーハゲスターティングマテリアルとし、これ
に種々のウェーハ処理を施こして多数の素子を１枚のウ
ェーハに形成し、各素子をウェーハ表面の切り代から分
離して、１枚のウェーハから多数の素子ペレントヲ得る
ことが行なわれ、分離された素子ベレノトヲパソケージ
に取り付けているのが一般的である。Conventionally, in the manufacture of semiconductor devices, a semiconductor wafer such as silicon is used as a starting material, which is subjected to various wafer processes to form a large number of elements on a single wafer, and each element is separated by a cutting margin on the wafer surface. It is common practice to obtain a large number of devices from one wafer by separating them from each other, and to attach the separated devices to a semiconductor cage.
この種の半導体ベレット（素子ベレット）ヲ半導体ウェ
ーハから分離する方法として、ウエーノ・１を粘着シー
ト２にはり、それを真空引きしている平滑板３上に固定
してダイヤモンドポイント４によりウェーハ１表面の切
り代をスクライプしたのち、スクライプを施したウェー
ハ１裏面側にローラ５を用いて曲げモーメントｖ与えウ
ェー／・１を結晶のへき開性７利用して破折しくブレー
キング）更に本発明者はウェーハからベレットを完全に
分離するための手段として粘着シート２下面から突き上
げ針６により機械的に個々に押し上げてウェーハ１から
分離する方法を試みてみた。（第１図（ａｌ〜（ｄ）
）。この場合、ブレーキング後のベレット７の形状は、
ウェーハ１の結晶軸にもとづいてへき開されており、各
ベレット間の離間距離がほとんどなく、しかもそのへき
関されたベレット側面はベレット表面に対し直角面では
なく５５゜程度の傾胴をもったものであるため、ウェー
ハ下面より粘着シー１介して突き上げ針によって押し上
げ、コレット８を用（・てベレットｖピックアップする
際、各ベレットが相互に干渉してベレット側面や側面近
傍のベレット表面にワレやカケなどの破損事故が生じ、
素子に致命的な影＠を与える欠点があることが判った。As a method for separating this type of semiconductor pellet (element pellet) from a semiconductor wafer, the wafer 1 is attached to an adhesive sheet 2, fixed on a smooth plate 3 that is evacuated, and a diamond point 4 is used to separate the wafer 1 from the surface of the wafer. After scribing the cutting allowance, the roller 5 is used to apply a bending moment v/.1 to the back side of the wafer 1 which has been scribed, and the wafer is braked in a destructive manner by utilizing the cleavage property 7 of the crystal). As a means to completely separate the pellets from the wafer, we tried a method in which the pellets were mechanically pushed up individually from the bottom surface of the adhesive sheet 2 using a push-up needle 6 to separate them from the wafer 1. (Figure 1 (al~(d)
). In this case, the shape of the pellet 7 after braking is
The wafer 1 is cleaved based on the crystal axis, and there is almost no distance between each pellet, and the side surfaces of the cleaved pellets are not perpendicular to the pellet surface but are inclined at an angle of about 55°. Therefore, when the wafer is pushed up from the bottom surface with the push-up needle through the adhesive sheet 1 and the collet 8 is used to pick up the pellet V, each pellet may interfere with each other and cause cracks or chips on the pellet surface on or near the pellet surface. Damage accidents such as
It turns out that there is a flaw that casts a fatal shadow on Motoko.
このようなり、象を避けるために、半導体ウェーハに密
着させて℃・るシー１柔軟でかつ伸張性のある樹脂とし
、シートを引き延ばすことにより各ベレットの間隔をあ
けてベレットのピックアップを行なうことが考えられる
。しかしながら、このような方法を採用すると、ベレッ
トの整列が均等でなくなり、後工程の自動化がやりにく
くなる欠点がある。Therefore, in order to avoid this phenomenon, it is possible to pick up the pellets by making a flexible and stretchable resin that is tightly attached to the semiconductor wafer and stretching the sheet so that there is space between each pellet. Conceivable. However, when such a method is adopted, the alignment of the pellets is not uniform, which makes it difficult to automate the post-process.
そこで本発明は、上述する諸問題を解消し、例えばベレ
ットの破損を少なくシ、ウェーハからのベレットのピン
クアップを高信頼性をもって行なうことができる新規な
半導体ベレット等の分離法を提供することを目的とする
ものである。SUMMARY OF THE INVENTION Therefore, it is an object of the present invention to provide a novel method for separating semiconductor pellets, etc., which solves the above-mentioned problems, reduces damage to the pellets, and allows pinking up of pellets from wafers with high reliability. This is the purpose.
このような目的を達成するために本発明の実施例では、
半導体ウェーハの結晶方向に無関係で平滑で垂直な面を
出せるダイシングにより裏面にシートが密着されて℃・
るウェーハをベレットに分割し、シート下面から突き上
げ針により機械的に個々のペレット側面し上げて、ベレ
ットをピックアップすることを特徴とする半導体ベレッ
ト分離法とするものである。In order to achieve this purpose, the embodiments of the present invention include:
The sheet is adhered to the back surface by dicing, which produces a smooth and perpendicular surface regardless of the crystal direction of the semiconductor wafer.
This semiconductor pellet separation method is characterized in that a wafer is divided into pellets, and the pellets are picked up by mechanically lifting the side surface of each pellet using a push-up needle from the bottom surface of the sheet.
以下、本発明を実施例にもとづし・て具体的に詳述する
。Hereinafter, the present invention will be specifically described in detail based on Examples.
第２図（ａ）〜（ｄ、）は１本発明の実施例の半導体ベ
レット分離法を示す概略断面図である。同図を用いて本
発明の実施例の半導体ベレット分離法をプロセス順に説
明する。FIGS. 2(a) to 2(d) are schematic cross-sectional views showing a semiconductor pellet separation method according to an embodiment of the present invention. A semiconductor pellet separation method according to an embodiment of the present invention will be explained in process order using the same figure.
（１）シリコンなどの半導体ウェーハ１０を用意し、コ
ノ裏面に粘着シート１１をはりつける。そして、この粘
着シート１１が密着されて℃・る半導体ウェーハ１０を
ダイシング装置の平滑板（テーブル）１２上に載置し、
ウェーハ１１の位置合わせな行なったのち、ウェーハ１
１をテーブル１２（（真空チャックし固定する。この状
態で冷却水を流しながらダイヤモンドブレード１３ン３
００００ｒｐｍ程度で高速回転させ、ウェーハ１１にお
ける切り代に溝ＡＶ入れる。ダイヤモンドブレード１３
を前後左右に操作させることによりウェーハ１１に格子
状σン溝Ａを形成することができる。溝への深さは、ダ
イヤモンドブレード１３とテーブル１２との離間距離を
規定することにより任意の値に選定することができる。(1) Prepare a semiconductor wafer 10 such as silicon, and attach an adhesive sheet 11 to the back side of the wafer. Then, the semiconductor wafer 10 to which this adhesive sheet 11 is adhered is placed on the smooth plate (table) 12 of the dicing machine, and
After aligning wafer 11, wafer 1
1 on the table 12 ((vacuum chuck and fix it. In this state, while flowing cooling water
The wafer 11 is rotated at a high speed of about 0,000 rpm, and grooves AV are formed in the cutting margin of the wafer 11. diamond blade 13
The lattice-shaped σ grooves A can be formed in the wafer 11 by operating the grooves back and forth and left and right. The depth of the groove can be selected to any desired value by defining the distance between the diamond blade 13 and the table 12.
また、溝への幅は、ダイヤモンドブレード１３の厚みに
よって左右されるが、３０μｍ程度のブレード１３を使
用することにより溝幅が４０〜５０μｍとすることがで
きる。Further, although the width of the groove depends on the thickness of the diamond blade 13, the groove width can be set to 40 to 50 μm by using a blade 13 of about 30 μm.
半導体ウェーハ１０は、選択不純物拡散、フォトエツチ
ング等のウェーハ処理を終え、多数の素子が形成された
もので、形状としては、３００〜４００μｍ、５０ｍｍ
φ〜１ｏｏｍｕｉφなど種々の態様のものである。The semiconductor wafer 10 has undergone wafer processing such as selective impurity diffusion and photoetching, and has a large number of elements formed thereon.
They are in various forms such as φ to 1oomuiφ.
粘着シート１１は、ダイシング後のウェーハ１゜が個々
のベレットに分離され無秩序に散乱しないために設ける
もので、ウェーハ１ｏ裏面に十分な強さで密着させるこ
とができ、かつ必要に応じて容易にはがすことができる
ものを使用する。The adhesive sheet 11 is provided to prevent the wafer 1° after dicing from being separated into individual pellets and scattered randomly.The adhesive sheet 11 can be adhered to the back surface of the wafer 1o with sufficient strength, and can be easily removed if necessary. Use something that can be peeled off.
なお、粘着シート１１？ウエーハ１ｏ裏面にはりつけて
いるため、ダイシングによる溝Ａの深さは、可及的に深
くでき、完全にウェーハ１０’＆分断するような形状の
溝Ａ’（ｒダイヤモンドブレード１３により形成するこ
ともできる。In addition, adhesive sheet 11? Since it is attached to the back surface of the wafer 1o, the depth of the groove A by dicing can be made as deep as possible, and the groove A' (r) having a shape that completely divides the wafer 10' (r can also be formed by the diamond blade 13). can.
（２）ダイシング後の半導体ウェーハＩＯＹ裏返しにし
て弾性ゴムなどからなる平板１４にのせ、粘着シート１
１上がらローラ１５′？押圧しながら回転移動させてウ
ェーハ１ｏに曲げモーメントラ与えて、ウェーハ１０を
溝Ａに沿って破折しくブレーキング）、ウェーハ１０’
＆個々の半導体ペレット１０ａに分割する。(2) Semiconductor wafer IOY after dicing is turned over and placed on a flat plate 14 made of elastic rubber, etc., and adhesive sheet 1
1 up roller 15'? The wafer 10 is rotated while being pressed to apply a bending moment to the wafer 1o, and the wafer 10 is fractured along the groove A), and the wafer 10' is
& Divide into individual semiconductor pellets 10a.
（３）ブレーキング後の半導体ウェーハＩＣｌ−半導体
ベレットピックアップ用枠体１６に粘着シート１１７介
して接着する。この半導体ベレントビノクアップ用枠体
１６は第３図に平面図、第４図に断面図を示すように、
内部中空の外枠１６ａにシ−ト１６ｂがはりつけである
もので、シー）１６ｂは外枠１６ａとの張力を必要とす
るので接着力の強（・ものが使用されている。(3) After braking, the semiconductor wafer ICl is bonded to the semiconductor bullet pickup frame 16 via the adhesive sheet 117. As shown in a plan view in FIG. 3 and a cross-sectional view in FIG.
The sheet 16b is glued to the outer frame 16a, which has a hollow interior.Since the sheet 16b requires tension with the outer frame 16a, a strong adhesive is used.
半導体ピンクアップ用枠体１６に固定された半導体ウェ
ーハ１０を、シート１６ｂ下面から突き上げ針１７によ
り機械的に押し上げ、これと連動して降下するコレット
（真空吸引チャック）１８を用（・て半導体ベレット１
０ ａ＆ピックアップする。突き上げ針１７はシー）１
６ｂ、１１を突き破りペレット１０ａ裏面を突き上げる
ことにより。The semiconductor wafer 10 fixed to the semiconductor pink-up frame 16 is mechanically pushed up from the bottom surface of the sheet 16b by the push-up needle 17, and a collet (vacuum suction chuck) 18 that descends in conjunction with this is used to push up the semiconductor wafer 10 from the bottom surface of the sheet 16b. 1
0 a & pick up. Push-up needle 17 is C)1
By punching through 6b and 11 and pushing up the back side of pellet 10a.
粘着シート１１からペレット１０ａ′？はぎ取る。Pellets 10a' from adhesive sheet 11? strip.
この場合、各半導体ペレット１０ａは、ダイシングによ
って形成した溝ＡＫよって降瘉するペレット１０ａと溝
幅（４０〜５０μｍ）分だけ離間された状態でもって、
ピックアップされる。そのため、ペレッＦ１０ａのピッ
クアップ時に、シート１１．１６ｂの変形などが生じて
も相互に干渉することはなく、ペレット１０ａのワレや
カケなどの破損がない。In this case, each semiconductor pellet 10a is separated by the groove width (40 to 50 μm) from the pellet 10a falling by the groove AK formed by dicing.
Will be picked up. Therefore, even if the sheets 11 and 16b are deformed when picking up the pellet F10a, they will not interfere with each other, and the pellet 10a will not be damaged such as cracking or chipping.
以上、実施例によって説明したが、本発明の要旨とする
ところは、例えば粘着シートをウェーハ裏面に密着せし
めた状態で、ウエーノ・表面にダイシングによる溝を形
成し、ブレーキングを行なってウェーハを折り曲げて個
々のペレットに割り、シートの一部を機械的に押し１げ
ることによりペレットヲ個々に分離するものである。し
たがって、ダイシングしたペレットの側面は、結晶のへ
き開を利用したダイヤモンドスクライビングの場合とは
異なり、結晶方向に無関係で、平滑で垂直な面を出せる
ため、ペレットのピックアップの際にペレットの破損が
生ぜず、高信頼性のペレット分離を行なうことができる
。さらに、各ペレットの整列性が極めてよいものである
ため、次工程のダイボンディングなどで自動化が容易と
なる。また、往復のダイシングやウェーハを完全に切断
することもできる（この場合はブレーキング工程は省略
できる）ので、作業性や収率がよくなる。As described above, the gist of the present invention is to form grooves by dicing on the surface of the wafer with an adhesive sheet closely attached to the back surface of the wafer, and then bend the wafer by applying braking. The sheet is divided into individual pellets, and a part of the sheet is mechanically pushed to separate the pellets into individual pellets. Therefore, unlike the case of diamond scribing, which uses crystal cleavage, the sides of the diced pellets are smooth and perpendicular, regardless of the crystal direction, so the pellets do not break when picked up. , highly reliable pellet separation can be performed. Furthermore, since the alignment of each pellet is extremely good, it is easy to automate the next process such as die bonding. Furthermore, it is possible to perform reciprocating dicing and completely cut the wafer (in this case, the breaking process can be omitted), improving workability and yield.
したがって、本発明にかかる板状物の分離法は、ペレッ
ト等の破損事故がなく、素子に何らの悪影響を与えるこ
となくウェーハをペレットに分割し。Therefore, the method for separating plate-shaped objects according to the present invention can divide a wafer into pellets without causing any damage to the pellets or the like, and without having any adverse effects on the devices.
そのペレソトヲ他のペレットから分離てることができる
。The pellets can be separated from other pellets.
第１図（ａ）〜（ｄ）は、半導体ベレット分離法を説明
するだめの概略断面図、第２図（ａ）〜（ｄ）は、本発
明の一実施例である半導体ベレット分離法を示す概略断
面図、第３図、第４図は半導体ベレットピックアンプ用
枠体を示す平面図とその矢視断面図である。
１．１０・・・半導体ウェーノー、２，１１・・・粘着
シート、３．１２・・・平滑板（テーブル）、４・・・
ダイヤモンドポイント、５，１５・・・ローラ、６，１
７・・・突き上げ針、７，１０ａ・・・半導体ペレット
、８゜１８・・・コレット、１３・・・タイヤモンドブ
レート。
１４・・・弾性ゴムなどの平板、１６・・・半導体ベレ
ントピックアンプ用枠体。
゛・（）
第 １ 図
（０−）
と、イージ
（Ｃ）
第 ２ 図
（１）
（１１）1(a) to (d) are schematic cross-sectional views for explaining the semiconductor pellet separation method, and FIG. The schematic cross-sectional view shown in FIGS. 3 and 4 are a plan view and a cross-sectional view taken in the direction of arrows, respectively, showing a frame for a semiconductor bullet pick amplifier. 1.10... Semiconductor waeno, 2,11... Adhesive sheet, 3.12... Smooth plate (table), 4...
Diamond point, 5,15...roller, 6,1
7... Push-up needle, 7,10a... Semiconductor pellet, 8°18... Collet, 13... Tire mondo plate. 14...Flat plate made of elastic rubber, etc., 16...Frame body for semiconductor Berenpick amplifier.゛・() Figure 1 (0-) and Easy (C) Figure 2 (1) (11)
Claims (1)
りつける粘着工程 （ｂ） 上記板状物ケ上記シートｖ介して枠体に固定
する工程 （ｃ） 上記粘着工程の後、上記板状物の他方の面よ
り溝を形成する工程 （ｄ） 上記溝により区画された上記板状物の所望の
領域を上記他方の面よりピックアップする工程 よりなる板状物の分離法。[Claims] 1. (a) Adhesive step of attaching one side of the plate-like object to an adhesive sheet (b) Step of fixing the above-mentioned plate-like object to the frame via the above-mentioned sheet v (c) The above-mentioned adhesion step After that, a step (d) of forming a groove from the other surface of the plate-like object; a step of picking up a desired area of the plate-like object partitioned by the groove from the other surface; separation of the plate-like object; Law.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58222008A JPS59130438A (en) | 1983-11-28 | 1983-11-28 | Method for separating plates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58222008A JPS59130438A (en) | 1983-11-28 | 1983-11-28 | Method for separating plates |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7110577A Division JPS546456A (en) | 1977-06-17 | 1977-06-17 | Separating method into semiconductor pellet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59130438A true JPS59130438A (en) | 1984-07-27 |
Family
ID=16775655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58222008A Pending JPS59130438A (en) | 1983-11-28 | 1983-11-28 | Method for separating plates |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59130438A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63160346A (en) * | 1986-12-24 | 1988-07-04 | Nec Corp | Manufacture of semiconductor device |
| EP1429378A1 (en) * | 2001-07-30 | 2004-06-16 | Nitto Denko Corporation | METHOD OF HEAT−PEELING CHIP CUT PIECES FROM HEAT PEEL TYPE ADHESIVE SHEET, ELECTRONIC PART, AND CIRCUIT BOARD |
| EP1610364A1 (en) * | 2003-03-12 | 2005-12-28 | Hamamatsu Photonics K.K. | Laser beam machining method |
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| US7566635B2 (en) | 2002-03-12 | 2009-07-28 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US8058103B2 (en) | 2003-09-10 | 2011-11-15 | Hamamatsu Photonics K.K. | Semiconductor substrate cutting method |
| US8361883B2 (en) * | 2002-03-12 | 2013-01-29 | Hamamatsu Photonics K.K. | Laser processing method |
| US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
-
1983
- 1983-11-28 JP JP58222008A patent/JPS59130438A/en active Pending
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| US7396742B2 (en) | 2000-09-13 | 2008-07-08 | Hamamatsu Photonics K.K. | Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object |
| US9837315B2 (en) | 2000-09-13 | 2017-12-05 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
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| US8946591B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Method of manufacturing a semiconductor device formed using a substrate cutting method |
| US7592238B2 (en) | 2000-09-13 | 2009-09-22 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
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| US8946592B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US8937264B2 (en) | 2000-09-13 | 2015-01-20 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| EP1429378A4 (en) * | 2001-07-30 | 2008-05-21 | Nitto Denko Corp | Method of heat-peeling chip cut pieces from heat peel type adhesive sheet, electronic part, and circuit board |
| EP1429378A1 (en) * | 2001-07-30 | 2004-06-16 | Nitto Denko Corporation | METHOD OF HEAT−PEELING CHIP CUT PIECES FROM HEAT PEEL TYPE ADHESIVE SHEET, ELECTRONIC PART, AND CIRCUIT BOARD |
| US8889525B2 (en) | 2002-03-12 | 2014-11-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
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| US9142458B2 (en) | 2002-03-12 | 2015-09-22 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9287177B2 (en) | 2002-03-12 | 2016-03-15 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9543207B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9543256B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US10622255B2 (en) | 2002-03-12 | 2020-04-14 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9553023B2 (en) | 2002-03-12 | 2017-01-24 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9711405B2 (en) | 2002-03-12 | 2017-07-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US10068801B2 (en) | 2002-03-12 | 2018-09-04 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
| EP1610364A4 (en) * | 2003-03-12 | 2008-08-27 | Hamamatsu Photonics Kk | Laser beam machining method |
| EP1610364A1 (en) * | 2003-03-12 | 2005-12-28 | Hamamatsu Photonics K.K. | Laser beam machining method |
| US8058103B2 (en) | 2003-09-10 | 2011-11-15 | Hamamatsu Photonics K.K. | Semiconductor substrate cutting method |
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