JPS5457861A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5457861A
JPS5457861A JP12347877A JP12347877A JPS5457861A JP S5457861 A JPS5457861 A JP S5457861A JP 12347877 A JP12347877 A JP 12347877A JP 12347877 A JP12347877 A JP 12347877A JP S5457861 A JPS5457861 A JP S5457861A
Authority
JP
Japan
Prior art keywords
annealing
layer
impurity
implanted
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12347877A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6122455B2 (enrdf_load_stackoverflow
Inventor
Masanobu Miyao
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12347877A priority Critical patent/JPS5457861A/ja
Publication of JPS5457861A publication Critical patent/JPS5457861A/ja
Publication of JPS6122455B2 publication Critical patent/JPS6122455B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP12347877A 1977-10-17 1977-10-17 Manufacture of semiconductor device Granted JPS5457861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12347877A JPS5457861A (en) 1977-10-17 1977-10-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12347877A JPS5457861A (en) 1977-10-17 1977-10-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5457861A true JPS5457861A (en) 1979-05-10
JPS6122455B2 JPS6122455B2 (enrdf_load_stackoverflow) 1986-05-31

Family

ID=14861616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12347877A Granted JPS5457861A (en) 1977-10-17 1977-10-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5457861A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209120A (ja) * 1982-05-31 1983-12-06 Toshiba Corp 半導体装置の製造方法
JPS5984422A (ja) * 1982-11-04 1984-05-16 Pioneer Electronic Corp 半導体装置の製造方法
JPS59204229A (ja) * 1983-05-04 1984-11-19 Sony Corp 半導体装置の製造方法
JPS6095921A (ja) * 1983-10-31 1985-05-29 Toshiba Corp 半導体装置の製造方法
JPS60137072A (ja) * 1983-12-26 1985-07-20 Matsushita Electronics Corp 接合型電界効果トランジスタの製造方法
JPS6362227A (ja) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Ｐ型ド−パントの特性のその他のｐ型ド−パントでの修正
JPH03139827A (ja) * 1989-10-25 1991-06-14 Katsuhiro Yokota 原子半径の異なる２種類以上の元素をイオン注入してシリコンに低抵抗層を形成する方法
WO2003075352A1 (en) * 2002-03-01 2003-09-12 Renesas Technology Corp. Semiconductor device and production method therefor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209120A (ja) * 1982-05-31 1983-12-06 Toshiba Corp 半導体装置の製造方法
JPS5984422A (ja) * 1982-11-04 1984-05-16 Pioneer Electronic Corp 半導体装置の製造方法
JPS59204229A (ja) * 1983-05-04 1984-11-19 Sony Corp 半導体装置の製造方法
JPS6095921A (ja) * 1983-10-31 1985-05-29 Toshiba Corp 半導体装置の製造方法
JPS60137072A (ja) * 1983-12-26 1985-07-20 Matsushita Electronics Corp 接合型電界効果トランジスタの製造方法
JPS6362227A (ja) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Ｐ型ド−パントの特性のその他のｐ型ド−パントでの修正
JPH03139827A (ja) * 1989-10-25 1991-06-14 Katsuhiro Yokota 原子半径の異なる２種類以上の元素をイオン注入してシリコンに低抵抗層を形成する方法
WO2003075352A1 (en) * 2002-03-01 2003-09-12 Renesas Technology Corp. Semiconductor device and production method therefor
US7141840B2 (en) 2002-03-01 2006-11-28 Renesas Technology Corp. Semiconductor device and production method therefor
CN100361314C (zh) * 2002-03-01 2008-01-09 株式会社瑞萨科技 半导体装置及其制造方法

Also Published As

Publication number Publication date
JPS6122455B2 (enrdf_load_stackoverflow) 1986-05-31

Similar Documents

Publication Publication Date Title
WO1999067825A3 (en) Methods of fabricating silicon carbide power devices by controlled annealing
JPS5748246A (en) Manufacture of semiconductor device
JPS55138267A (en) Manufacture of semiconductor integrated circuit containing resistance element
JPS5457861A (en) Manufacture of semiconductor device
US4116717A (en) Ion implanted eutectic gallium arsenide solar cell
JPS5676575A (en) Manufacture of junction type field effect semiconductor device
Johansson et al. Hall effect measurements on Sb and Ga implanted silicon; anneal behavior and comparison with other species
JPS5583256A (en) Semiconductor integrated circuit
JPS57159013A (en) Manufacture of semiconductor thin film
JPS5645047A (en) Manufacture of semiconductor monocrystal film
JPS5412565A (en) Production of semiconductor device
US3919009A (en) Method for producing an improved thyristor
GB1384935A (en) Ion implanted resistor and method
JPS54141585A (en) Semiconductor integrated circuit device
JPS54156490A (en) Forming method of current path in semiconductor
JPS5529108A (en) Semiconductor resistance element
JPS54880A (en) Manufacture of semiconductor device
JPS57177537A (en) Isolation of semiconductor element
JPS6476760A (en) Manufacture of semiconductor device
JPS5413279A (en) Manufacture for semiconductor integrated circuit device
JPS5541783A (en) Semiconductor device and method of manufacturing the same
JPS5452483A (en) Semiconductor integrated circuit
JPS5427382A (en) Semiconductor integrated circuit device
JPS5591822A (en) Manufacture of semiconductor device
JPS57167676A (en) Semiconductor device and manufacture thereof