JPS6122455B2 - - Google Patents
Info
- Publication number
- JPS6122455B2 JPS6122455B2 JP12347877A JP12347877A JPS6122455B2 JP S6122455 B2 JPS6122455 B2 JP S6122455B2 JP 12347877 A JP12347877 A JP 12347877A JP 12347877 A JP12347877 A JP 12347877A JP S6122455 B2 JPS6122455 B2 JP S6122455B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- heat treatment
- implantation
- conductivity type
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 239000007943 implant Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005280 amorphization Methods 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 238000002513 implantation Methods 0.000 description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 229910052698 phosphorus Inorganic materials 0.000 description 13
- 239000011574 phosphorus Substances 0.000 description 13
- 229910052785 arsenic Inorganic materials 0.000 description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 235000003392 Curcuma domestica Nutrition 0.000 description 1
- 244000008991 Curcuma longa Species 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 235000003373 curcuma longa Nutrition 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003411 electrode reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000013976 turmeric Nutrition 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12347877A JPS5457861A (en) | 1977-10-17 | 1977-10-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12347877A JPS5457861A (en) | 1977-10-17 | 1977-10-17 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5457861A JPS5457861A (en) | 1979-05-10 |
| JPS6122455B2 true JPS6122455B2 (enrdf_load_stackoverflow) | 1986-05-31 |
Family
ID=14861616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12347877A Granted JPS5457861A (en) | 1977-10-17 | 1977-10-17 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5457861A (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58209120A (ja) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | 半導体装置の製造方法 |
| JPS5984422A (ja) * | 1982-11-04 | 1984-05-16 | Pioneer Electronic Corp | 半導体装置の製造方法 |
| JPS59204229A (ja) * | 1983-05-04 | 1984-11-19 | Sony Corp | 半導体装置の製造方法 |
| JPS6095921A (ja) * | 1983-10-31 | 1985-05-29 | Toshiba Corp | 半導体装置の製造方法 |
| JPS60137072A (ja) * | 1983-12-26 | 1985-07-20 | Matsushita Electronics Corp | 接合型電界効果トランジスタの製造方法 |
| US4746964A (en) * | 1986-08-28 | 1988-05-24 | Fairchild Semiconductor Corporation | Modification of properties of p-type dopants with other p-type dopants |
| JPH03139827A (ja) * | 1989-10-25 | 1991-06-14 | Katsuhiro Yokota | 原子半径の異なる２種類以上の元素をイオン注入してシリコンに低抵抗層を形成する方法 |
| JP4308496B2 (ja) | 2002-03-01 | 2009-08-05 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
-
1977
- 1977-10-17 JP JP12347877A patent/JPS5457861A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5457861A (en) | 1979-05-10 |
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