JPS5456767A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5456767A JPS5456767A JP12365677A JP12365677A JPS5456767A JP S5456767 A JPS5456767 A JP S5456767A JP 12365677 A JP12365677 A JP 12365677A JP 12365677 A JP12365677 A JP 12365677A JP S5456767 A JPS5456767 A JP S5456767A
- Authority
- JP
- Japan
- Prior art keywords
- gold plating
- thin
- cap
- semiconductor device
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Wire Bonding (AREA)
Abstract
PURPOSE: To obtain a highly reliable semiconductor device which is connected with the thin wire of Al or Al alloy by giving thin gold plating to the top surface of the lead terminal and thick gold plating to the outside exposed part respectively.
CONSTITUTION: Thin gold plating 5 is given of the entire surface of metal stem 1'; cap 10 made of rubber or the like is put on metal header 2; and cap 10 and header 2 are sealed together via lead terminal 4 and metal cap 8. In this case, thick gold plating 9 is given only to the outside exposed part. In such constitution, thin gold film 5 exists on the top surface of terminal 4 which is connected with thin wire 7 of Al or Al alloy, so that the occurrence of the resistance fault caused by the compound grown between gold and Al can be prevented. Furthermore, the outside exosed part is covered with the thick gold film, thus avoiding the deterioration caused by oxidation while the device is working. Thus, a highly reliable semiconductor device can be obtained
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12365677A JPS5456767A (en) | 1977-10-14 | 1977-10-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12365677A JPS5456767A (en) | 1977-10-14 | 1977-10-14 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5456767A true JPS5456767A (en) | 1979-05-08 |
Family
ID=14866007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12365677A Pending JPS5456767A (en) | 1977-10-14 | 1977-10-14 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5456767A (en) |
-
1977
- 1977-10-14 JP JP12365677A patent/JPS5456767A/en active Pending
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