JPS5456763A - Resistivity measuring method for semiconductor silicon single-crystal - Google Patents
Resistivity measuring method for semiconductor silicon single-crystalInfo
- Publication number
- JPS5456763A JPS5456763A JP12296977A JP12296977A JPS5456763A JP S5456763 A JPS5456763 A JP S5456763A JP 12296977 A JP12296977 A JP 12296977A JP 12296977 A JP12296977 A JP 12296977A JP S5456763 A JPS5456763 A JP S5456763A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- water solution
- given
- resistivity
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12296977A JPS5843902B2 (ja) | 1977-10-15 | 1977-10-15 | 半導体シリコン単結晶の抵抗率測定方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12296977A JPS5843902B2 (ja) | 1977-10-15 | 1977-10-15 | 半導体シリコン単結晶の抵抗率測定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5456763A true JPS5456763A (en) | 1979-05-08 |
JPS5843902B2 JPS5843902B2 (ja) | 1983-09-29 |
Family
ID=14849074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12296977A Expired JPS5843902B2 (ja) | 1977-10-15 | 1977-10-15 | 半導体シリコン単結晶の抵抗率測定方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5843902B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0889514A1 (en) * | 1993-07-16 | 1999-01-07 | Shin-Etsu Handotai Company Limited | Method for determination of resistivity of N-type silicon epitaxial layer |
CN101806837A (zh) * | 2010-04-14 | 2010-08-18 | 高佳太阳能股份有限公司 | 对半导体重掺硅片电阻率进行测试并分档的方法 |
-
1977
- 1977-10-15 JP JP12296977A patent/JPS5843902B2/ja not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0889514A1 (en) * | 1993-07-16 | 1999-01-07 | Shin-Etsu Handotai Company Limited | Method for determination of resistivity of N-type silicon epitaxial layer |
CN101806837A (zh) * | 2010-04-14 | 2010-08-18 | 高佳太阳能股份有限公司 | 对半导体重掺硅片电阻率进行测试并分档的方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5843902B2 (ja) | 1983-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5456763A (en) | Resistivity measuring method for semiconductor silicon single-crystal | |
JPS55113335A (en) | Manufacture of semiconductor device | |
JPS5359385A (en) | Production method of semiconductor thermal sensitive element | |
JPS5444870A (en) | Manufacture of semiconductor device | |
JPS5621390A (en) | Josephson element | |
JPS54128678A (en) | Forming method of insulation film | |
JPS55141659A (en) | Atom concentration measuring method of iron in silicon crystal | |
JPS5512726A (en) | Process for manufacturing semiconductor substrate | |
JPS5754333A (ja) | Handotaisochitosonoseizohoho | |
JPS5519873A (en) | Forming method of metallic layer pattern for semiconductor | |
JPS57118647A (en) | Manufacture of semiconductor device | |
JPS5636149A (en) | Forming method for resistance region | |
JPS5339873A (en) | Etching method of silicon semiconductor substrate containing gold | |
JPS5478337A (en) | Production of indium-antimony thin film | |
JPS53140974A (en) | Semiconductor surface treating method | |
JPS55138236A (en) | Manufacture of semiconductor device | |
JPS57118644A (en) | Manufacture of semiconductor device | |
JPS54162451A (en) | Heat treatment method of compound semiconductor and its heat treatment unit | |
JPS5515023A (en) | Measuring method for etching speed of thin film | |
JPS56124233A (en) | Method for formation of platinum silicic layer | |
HEIJNEN et al. | Measurement and calculation of parameters in the silox diffusion process(semiconductor devices) | |
JPS5679474A (en) | Preparing method of semiconductor device | |
JPS5554573A (en) | Etching method for substrate | |
JPS566493A (en) | Manufacture of semiconductor laser element | |
JPS5539634A (en) | Manufacture of semiconductor |