JPS5455166A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5455166A JPS5455166A JP12207277A JP12207277A JPS5455166A JP S5455166 A JPS5455166 A JP S5455166A JP 12207277 A JP12207277 A JP 12207277A JP 12207277 A JP12207277 A JP 12207277A JP S5455166 A JPS5455166 A JP S5455166A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- exposed
- metal electrode
- corner
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To exclude concentration of electric fields and increase dielectric strength by forming metal electrode faces on the front and back surfaces of a pellet but not up to their corner parts and leaving the corner parts exposed and etching away and rounding said parts at the time of forming a square tupe semiconductor pellet.
CONSTITUTION: A gate metal electrode face 4 is formed in the central part of the surface of a square shaped semiconductor substrate and a cathode metal electrode face 2 is deposited by surrounding this, at which time corner parts are exposed and rounded. Next, at the time of depositing an anode metal electrode face 3 on the same back surface of the substrate, the corner portions are also kept exposed in the same manner. Thereafter, solder layers 5 are deposited on the respective electrode surfaces. Next, such pellet 1 is etched and the exposed corner portions are removed together with their side faces. Then, the occurrence of electric field concentration in the corner portions of the pellet 1 is obviated, hence the pellet becomes able to withstand high electric fields
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12207277A JPS5455166A (en) | 1977-10-11 | 1977-10-11 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12207277A JPS5455166A (en) | 1977-10-11 | 1977-10-11 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5455166A true JPS5455166A (en) | 1979-05-02 |
Family
ID=14826940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12207277A Pending JPS5455166A (en) | 1977-10-11 | 1977-10-11 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5455166A (en) |
-
1977
- 1977-10-11 JP JP12207277A patent/JPS5455166A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5754370A (en) | Insulating gate type transistor | |
| JPS56160740A (en) | Manufacture of thin-film field type cold cathode | |
| JPS5455166A (en) | Production of semiconductor device | |
| JPS5331983A (en) | Production of semiconductor substrates | |
| JPS57149480A (en) | Electrochemical apparatus with insoluble electrode | |
| JPS5380161A (en) | Electrode formation of semiconductor | |
| GB960257A (en) | Improvements in or relating to methods of manufacturing grid plates | |
| JPS54115065A (en) | Semiconductor device | |
| JPS51129173A (en) | Semi conductor with high voltage proof schottky electrode and it's man uacturing method. | |
| JPS5267963A (en) | Manufacture of semiconductor unit | |
| JPS5661175A (en) | Thin-film solar cell | |
| JPS52119084A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5310266A (en) | Production of soldred semiconductor wafers | |
| JPS55148422A (en) | Manufacturing of semiconductor device | |
| JPS5361274A (en) | Production of high frequency semiconductor devce | |
| JPS5423375A (en) | Manufacture of schottky barrier type electrode | |
| JPS51123063A (en) | Fabrication technique of electrodes for semiconductor devices | |
| JPS5772350A (en) | Fabrication of semiconductor device | |
| JPS5493967A (en) | Production of gallium arsenide semiconductor device | |
| JPS5272186A (en) | Production of mis type semiconductor device | |
| JPS56158874A (en) | Plasma etching method | |
| JPS5776186A (en) | Sputter etching method | |
| JPS5376752A (en) | Production of semionductor device | |
| JPS57128921A (en) | Manufacture of semiconductor element | |
| JPS6484224A (en) | Electrode forming method |