JPS5454586A - Electron beam programmable semiconductor structure - Google Patents

Electron beam programmable semiconductor structure

Info

Publication number
JPS5454586A
JPS5454586A JP11447278A JP11447278A JPS5454586A JP S5454586 A JPS5454586 A JP S5454586A JP 11447278 A JP11447278 A JP 11447278A JP 11447278 A JP11447278 A JP 11447278A JP S5454586 A JPS5454586 A JP S5454586A
Authority
JP
Japan
Prior art keywords
electron beam
semiconductor structure
programmable semiconductor
beam programmable
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11447278A
Other languages
English (en)
Japanese (ja)
Inventor
Uiriamu Pooueru Maikeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPS5454586A publication Critical patent/JPS5454586A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P34/40—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/066—Means for reducing external access-lines for a semiconductor memory clip, e.g. by multiplexing at least address and data signals

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Recrystallisation Techniques (AREA)
JP11447278A 1977-09-19 1978-09-18 Electron beam programmable semiconductor structure Pending JPS5454586A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/834,081 US4190849A (en) 1977-09-19 1977-09-19 Electronic-beam programmable semiconductor device structure

Publications (1)

Publication Number Publication Date
JPS5454586A true JPS5454586A (en) 1979-04-28

Family

ID=25266062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11447278A Pending JPS5454586A (en) 1977-09-19 1978-09-18 Electron beam programmable semiconductor structure

Country Status (9)

Country Link
US (1) US4190849A (enExample)
JP (1) JPS5454586A (enExample)
DE (1) DE2840577A1 (enExample)
FR (1) FR2403649A1 (enExample)
GB (1) GB2004689B (enExample)
HK (1) HK66384A (enExample)
MY (1) MY8500490A (enExample)
NL (1) NL7809449A (enExample)
SG (1) SG18084G (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010029618A1 (ja) * 2008-09-10 2010-03-18 株式会社アドバンテスト メモリデバイス、メモリデバイスの製造方法、およびデータ書込方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3032306A1 (de) * 1980-08-27 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung mit zu- und/oder abschaltbaren schaltungsteilen
DE3032333A1 (de) * 1980-08-27 1982-04-22 Siemens AG, 1000 Berlin und 8000 München Monolithische statische speicherzelle und verfahren zu ihrem betrieb
DE3032295A1 (de) * 1980-08-27 1982-04-01 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter festwertspeicher
US4473836A (en) * 1982-05-03 1984-09-25 Dalsa Inc. Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
JPS6273653A (ja) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp 容量回路構造
US11688586B2 (en) * 2018-08-30 2023-06-27 Tokyo Electron Limited Method and apparatus for plasma processing

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
US3573753A (en) * 1968-08-01 1971-04-06 Gen Electric Information storage and retrieval employing an electron beam
US3886530A (en) * 1969-06-02 1975-05-27 Massachusetts Inst Technology Signal storage device
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
US3721962A (en) * 1970-08-03 1973-03-20 Ncr Beam accessed mos memory with beam reading,writing,and erasing
US3825946A (en) * 1971-01-15 1974-07-23 Intel Corp Electrically alterable floating gate device and method for altering same
US3736571A (en) * 1971-02-10 1973-05-29 Micro Bit Corp Method and system for improved operation of conductor-insulator-semiconductor capacitor memory having increased storage capability
US3761895A (en) * 1971-03-17 1973-09-25 Gen Electric Method and apparatus for storing and reading out charge in an insulating layer
US4087795A (en) * 1974-09-20 1978-05-02 Siemens Aktiengesellschaft Memory field effect storage device
US4079358A (en) * 1976-10-04 1978-03-14 Micro-Bit Corporation Buried junction MOS memory capacitor target for electron beam addressable memory and method of using same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010029618A1 (ja) * 2008-09-10 2010-03-18 株式会社アドバンテスト メモリデバイス、メモリデバイスの製造方法、およびデータ書込方法
JPWO2010029618A1 (ja) * 2008-09-10 2012-02-02 株式会社アドバンテスト メモリデバイス、メモリデバイスの製造方法、およびデータ書込方法
US8369126B2 (en) 2008-09-10 2013-02-05 Advantest Corporation Memory device, manufacturing method for memory device and method for data writing

Also Published As

Publication number Publication date
FR2403649A1 (enExample) 1979-04-13
MY8500490A (en) 1985-12-31
DE2840577A1 (de) 1979-03-22
HK66384A (en) 1984-08-31
US4190849A (en) 1980-02-26
SG18084G (en) 1985-03-08
NL7809449A (nl) 1979-03-21
GB2004689A (en) 1979-04-04
GB2004689B (en) 1982-05-12

Similar Documents

Publication Publication Date Title
GB2010985A (en) Rotary-anode
JPS53147458A (en) Electron microscope
JPS5454586A (en) Electron beam programmable semiconductor structure
JPS5392680A (en) Semiconductor laser
JPS5429981A (en) Device for radiating electron beam
JPS5414694A (en) Double heteroostructure semiconductor laser
JPS53121574A (en) Electron beam exposing device
JPS53124078A (en) Electron beam device
JPS535049A (en) Electron beam welding
JPS5638757A (en) Electron beam device
JPS52133775A (en) Electron beam carrier
GB2032684B (en) Electron beam aperture device
JPS52138449A (en) Electron beam welder
GB2011710B (en) Semiconductor structures
JPS5222547A (en) Electron beam device
JPS536244A (en) Electron beam welding
JPS52148453A (en) Electron beam welding
JPS5442980A (en) Electron beam unit
CS193322B1 (en) Electron resisit
JPS52134842A (en) Electron beam welder
JPS5334648A (en) Electron beam welding
JPS5329243A (en) Electron beam welding
JPS5475117A (en) Perforrated beam
JPS5458366A (en) Electron beam unit
JPS5354396A (en) Electron beam machining device