JPS5454578A - Gas plasma etching method - Google Patents

Gas plasma etching method

Info

Publication number
JPS5454578A
JPS5454578A JP12170177A JP12170177A JPS5454578A JP S5454578 A JPS5454578 A JP S5454578A JP 12170177 A JP12170177 A JP 12170177A JP 12170177 A JP12170177 A JP 12170177A JP S5454578 A JPS5454578 A JP S5454578A
Authority
JP
Japan
Prior art keywords
film
sio
etching
gas
vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12170177A
Other languages
English (en)
Inventor
Fumio Yamagishi
Yuji Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12170177A priority Critical patent/JPS5454578A/ja
Publication of JPS5454578A publication Critical patent/JPS5454578A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP12170177A 1977-10-11 1977-10-11 Gas plasma etching method Pending JPS5454578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12170177A JPS5454578A (en) 1977-10-11 1977-10-11 Gas plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12170177A JPS5454578A (en) 1977-10-11 1977-10-11 Gas plasma etching method

Publications (1)

Publication Number Publication Date
JPS5454578A true JPS5454578A (en) 1979-04-28

Family

ID=14817730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12170177A Pending JPS5454578A (en) 1977-10-11 1977-10-11 Gas plasma etching method

Country Status (1)

Country Link
JP (1) JPS5454578A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799745A (en) * 1980-10-20 1982-06-21 Western Electric Co Method of producing integrated circuit device
JPS59107516A (ja) * 1982-12-13 1984-06-21 Nec Corp 半導体装置の製造方法
US4734157A (en) * 1985-08-27 1988-03-29 International Business Machines Corporation Selective and anisotropic dry etching
US5030319A (en) * 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
US7202171B2 (en) 2001-01-03 2007-04-10 Micron Technology, Inc. Method for forming a contact opening in a semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799745A (en) * 1980-10-20 1982-06-21 Western Electric Co Method of producing integrated circuit device
JPS59107516A (ja) * 1982-12-13 1984-06-21 Nec Corp 半導体装置の製造方法
JPH0410211B2 (ja) * 1982-12-13 1992-02-24
US4734157A (en) * 1985-08-27 1988-03-29 International Business Machines Corporation Selective and anisotropic dry etching
US5030319A (en) * 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
US7202171B2 (en) 2001-01-03 2007-04-10 Micron Technology, Inc. Method for forming a contact opening in a semiconductor device

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