JPS5451393A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS5451393A
JPS5451393A JP11760877A JP11760877A JPS5451393A JP S5451393 A JPS5451393 A JP S5451393A JP 11760877 A JP11760877 A JP 11760877A JP 11760877 A JP11760877 A JP 11760877A JP S5451393 A JPS5451393 A JP S5451393A
Authority
JP
Japan
Prior art keywords
light
electrode
emission
wavelength
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11760877A
Other languages
Japanese (ja)
Inventor
Kuniaki Iwamoto
Isao Hino
Katsuhiko Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11760877A priority Critical patent/JPS5451393A/en
Publication of JPS5451393A publication Critical patent/JPS5451393A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE: To make possible light emission of high quality with high light emission efficiency by enabling the interference effect of light to be positively utilized.
CONSTITUTION: The double hetero structure comprising sandwiching a semiconductor crystal layer 12 acting as a light emitting layer from both sides with semiconductor crystal layers 11, 13 of a larger forbidden band width is provided, wherein a light reflective back electrode 15 is formed on one of the two main surfaces of the laminated crystals and a front electrode 14 convenient for drawing out of light is formed on the other. Thereupon, the spacing D between the emission face of light and the back electrode face, the spacing (d) between the light emission layer and the back electrode, the emission wavelength λ in a vacuum and the equivalent refractive index (n) of the light emitting diode to the light of wavelength λ are so set that the relations thereamong satisfy the conditions shown by formulas-(1), (2). Here, m, m' are the positive integers indicating the number of order of interference, and ϕ is the phase change produced at the time when the light reflects at the interface of the semiconductor and electrode and is the constant determined by the semiconductor used, electrode metals and wavelength of light. The thickness of the light emission layer is defined below the order of 1/10μm
COPYRIGHT: (C)1979,JPO&Japio
JP11760877A 1977-09-29 1977-09-29 Light emitting diode Pending JPS5451393A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11760877A JPS5451393A (en) 1977-09-29 1977-09-29 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11760877A JPS5451393A (en) 1977-09-29 1977-09-29 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS5451393A true JPS5451393A (en) 1979-04-23

Family

ID=14715967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11760877A Pending JPS5451393A (en) 1977-09-29 1977-09-29 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS5451393A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019220704A (en) * 2013-06-19 2019-12-26 ルミレッズ ホールディング ベーフェー Led with patterned surface feature part based on emission field patterns

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019220704A (en) * 2013-06-19 2019-12-26 ルミレッズ ホールディング ベーフェー Led with patterned surface feature part based on emission field patterns

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