JPS5447900A - Vapor phase growth method for group 3-5 compound semiconductor - Google Patents
Vapor phase growth method for group 3-5 compound semiconductorInfo
- Publication number
- JPS5447900A JPS5447900A JP11484077A JP11484077A JPS5447900A JP S5447900 A JPS5447900 A JP S5447900A JP 11484077 A JP11484077 A JP 11484077A JP 11484077 A JP11484077 A JP 11484077A JP S5447900 A JPS5447900 A JP S5447900A
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- growth
- press
- group iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To attain a high growth speed at a low temp. without increasing consump tion of raw materials by using chloride of a group III element as the supply source of the element and carrying out vapor phase growth in a hydrogen atmosphere of a press. above 1atm.
CONSTITUTION: Vapor phase growth of a group III-V cpd. semiconductor by an open tube method is carried out using chloride of a group III element as the supply source of the element in a hydrogen atmosphere of a press. above 1atm. In case the semiconductor is e.g. GaAs, growth speed of a conventional method is about 20μ/ min at 750°C and about 10μ/min at 700°C. On the other hand, when vapor phase growth is carried out by the method of this invention at 700°C in a hydrogen atmosphere of 2atm, the growth speed becomes almost equal to that of the conventional method at 750°C and it increases as hydrogen press. is raised. Accordingly, harmful affects such as contamination due to high temp. growth can be eliminated with no waste of raw materials and time.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11484077A JPS5447900A (en) | 1977-09-22 | 1977-09-22 | Vapor phase growth method for group 3-5 compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11484077A JPS5447900A (en) | 1977-09-22 | 1977-09-22 | Vapor phase growth method for group 3-5 compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5447900A true JPS5447900A (en) | 1979-04-14 |
Family
ID=14648008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11484077A Pending JPS5447900A (en) | 1977-09-22 | 1977-09-22 | Vapor phase growth method for group 3-5 compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5447900A (en) |
-
1977
- 1977-09-22 JP JP11484077A patent/JPS5447900A/en active Pending
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