JPS5441280A - Manufacturing apparatus for single crystal - Google Patents

Manufacturing apparatus for single crystal

Info

Publication number
JPS5441280A
JPS5441280A JP10764677A JP10764677A JPS5441280A JP S5441280 A JPS5441280 A JP S5441280A JP 10764677 A JP10764677 A JP 10764677A JP 10764677 A JP10764677 A JP 10764677A JP S5441280 A JPS5441280 A JP S5441280A
Authority
JP
Japan
Prior art keywords
vessel
furnace
crucible
opening
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10764677A
Other languages
Japanese (ja)
Other versions
JPS5727076B2 (en
Inventor
Hiroshi Hirata
Keigo Hoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10764677A priority Critical patent/JPS5441280A/en
Publication of JPS5441280A publication Critical patent/JPS5441280A/en
Publication of JPS5727076B2 publication Critical patent/JPS5727076B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To provide a manufacturing apparatus for single crystals which prevents deposition and soidification of reaction gas on the inside surface of the furnace, by extending a inert gas exhaust pipe into the furnace vessel so that the pipe opening faces downwards to the molten liquid contined in a crucible installed in a furnace vessel. The vessel is equipped with introducing and exhausting pipes for inert gas so as to make dicharge of the reaction gas easy.
CONSTITUTION: An exhausting pipe 11 is extended into a furnace vessel 1 so that exhaust opening 11' faces downwards to the molten liq. 6 contained in a crucible 4 which is installed in the furnace vessel 1. Hereby inert gas 12 running towards the exhaust opening 11' forms a smooth flow without residence just above the molten liq. 6 and concentrates to the opening 11'. In addn., unnecessary reaction gas 13 produced in the crucible 4 is discharged immediately through the exhaust pipe 11 without diffusing in the vessel 1.
COPYRIGHT: (C)1979,JPO&Japio
JP10764677A 1977-09-07 1977-09-07 Manufacturing apparatus for single crystal Granted JPS5441280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10764677A JPS5441280A (en) 1977-09-07 1977-09-07 Manufacturing apparatus for single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10764677A JPS5441280A (en) 1977-09-07 1977-09-07 Manufacturing apparatus for single crystal

Publications (2)

Publication Number Publication Date
JPS5441280A true JPS5441280A (en) 1979-04-02
JPS5727076B2 JPS5727076B2 (en) 1982-06-08

Family

ID=14464456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10764677A Granted JPS5441280A (en) 1977-09-07 1977-09-07 Manufacturing apparatus for single crystal

Country Status (1)

Country Link
JP (1) JPS5441280A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05117075A (en) * 1991-08-30 1993-05-14 Komatsu Electron Metals Co Ltd Apparatus for pulling up single crystal and pull-up method
JP2006169010A (en) * 2004-12-13 2006-06-29 Komatsu Electronic Metals Co Ltd Apparatus and method for manufacturing semiconductor single crystal
US10378121B2 (en) 2015-11-24 2019-08-13 Globalwafers Co., Ltd. Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376177A (en) * 1976-12-15 1978-07-06 Western Electric Co Method and apparatus for growing crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376177A (en) * 1976-12-15 1978-07-06 Western Electric Co Method and apparatus for growing crystal

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05117075A (en) * 1991-08-30 1993-05-14 Komatsu Electron Metals Co Ltd Apparatus for pulling up single crystal and pull-up method
JP2006169010A (en) * 2004-12-13 2006-06-29 Komatsu Electronic Metals Co Ltd Apparatus and method for manufacturing semiconductor single crystal
JP4730937B2 (en) * 2004-12-13 2011-07-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Semiconductor single crystal manufacturing apparatus and manufacturing method
US8753446B2 (en) 2004-12-13 2014-06-17 Sumco Techxiv Kabushiki Kaisha Semiconductor single crystal production device and producing method therefor
US10378121B2 (en) 2015-11-24 2019-08-13 Globalwafers Co., Ltd. Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path

Also Published As

Publication number Publication date
JPS5727076B2 (en) 1982-06-08

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