JPS5441076A - Method of radiating charged beam using complementary mask - Google Patents
Method of radiating charged beam using complementary maskInfo
- Publication number
- JPS5441076A JPS5441076A JP9006278A JP9006278A JPS5441076A JP S5441076 A JPS5441076 A JP S5441076A JP 9006278 A JP9006278 A JP 9006278A JP 9006278 A JP9006278 A JP 9006278A JP S5441076 A JPS5441076 A JP S5441076A
- Authority
- JP
- Japan
- Prior art keywords
- charged beam
- complementary mask
- radiating
- radiating charged
- complementary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2739502A DE2739502C3 (de) | 1977-09-02 | 1977-09-02 | Verfahren zur Belichtung durch Korpuskularstrahlen-Schattenwurf und Vorrichtung zur Durchführung des Verfahrens |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5441076A true JPS5441076A (en) | 1979-03-31 |
JPS5416715B2 JPS5416715B2 (ja) | 1979-06-25 |
Family
ID=6017915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9006278A Granted JPS5441076A (en) | 1977-09-02 | 1978-07-25 | Method of radiating charged beam using complementary mask |
Country Status (6)
Country | Link |
---|---|
US (1) | US4169230A (ja) |
EP (1) | EP0001042B1 (ja) |
JP (1) | JPS5441076A (ja) |
AT (1) | AT376066B (ja) |
DE (2) | DE2739502C3 (ja) |
IT (1) | IT1202764B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6969571B2 (en) | 2001-11-30 | 2005-11-29 | Sony Corporation | Exposure method using complementary divided mask, exposure apparatus, semiconductor device, and method of producing the same |
US6998201B2 (en) | 2001-11-12 | 2006-02-14 | Sony Corporation | Complementary masks and method of fabrication of same, exposure method, and semiconductor device and method of production of same |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2837590A1 (de) * | 1978-08-29 | 1980-03-13 | Ibm Deutschland | Verfahren zur schattenwurfbelichtung |
DE2841124C2 (de) * | 1978-09-21 | 1984-09-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von elektronischen Halbleiterbauelementen durch Röntgen-Lithographie |
DE2966200D1 (en) * | 1978-10-30 | 1983-10-27 | Sanden Corp | Scroll-type fluid compressor units |
US4310743A (en) * | 1979-09-24 | 1982-01-12 | Hughes Aircraft Company | Ion beam lithography process and apparatus using step-and-repeat exposure |
DE2939044A1 (de) * | 1979-09-27 | 1981-04-09 | Ibm Deutschland Gmbh, 7000 Stuttgart | Einrichtung fuer elektronenstrahllithographie |
DE3067832D1 (en) * | 1980-07-10 | 1984-06-20 | Ibm | Process for compensating the proximity effect in electron beam projection devices |
US4504558A (en) * | 1980-07-10 | 1985-03-12 | International Business Machines Corporation | Method of compensating the proximity effect in electron beam projection systems |
DE3173277D1 (en) * | 1980-12-29 | 1986-01-30 | Fujitsu Ltd | Method of projecting circuit patterns |
DE3121666A1 (de) * | 1981-05-30 | 1982-12-16 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren und einrichtung zur gegenseitigen ausrichtung von objekten bei roentgenstrahl- und korpuskularstrahl-belichtungsvorgaengen |
JPS57211732A (en) * | 1981-06-24 | 1982-12-25 | Toshiba Corp | X ray exposing mask and manufacture thereof |
JPS5834918A (ja) * | 1981-08-26 | 1983-03-01 | Fujitsu Ltd | 電子ビ−ム露光方法 |
DE3410885A1 (de) * | 1984-03-24 | 1985-10-03 | Ibm Deutschland Gmbh, 7000 Stuttgart | Fehlerkorrigierte korpuskularstrahllithographie |
AT393925B (de) * | 1987-06-02 | 1992-01-10 | Ims Ionen Mikrofab Syst | Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind |
US4845370A (en) * | 1987-12-11 | 1989-07-04 | Radiation Dynamics, Inc. | Magnetic field former for charged particle beams |
EP0364929B1 (en) * | 1988-10-20 | 1995-09-06 | Fujitsu Limited | Fabrication method of semiconductor devices and transparent mask for charged particle beam |
JPH03270215A (ja) * | 1990-03-20 | 1991-12-02 | Fujitsu Ltd | 荷電粒子ビーム露光方法及び露光装置 |
JP2837515B2 (ja) * | 1990-06-20 | 1998-12-16 | 富士通株式会社 | 電子ビーム露光装置 |
DE19642116C2 (de) * | 1996-10-12 | 2000-12-07 | Fraunhofer Ges Forschung | Verfahren zur strukturierten Energieübertragung mit Elektronenstrahlen |
US5831272A (en) * | 1997-10-21 | 1998-11-03 | Utsumi; Takao | Low energy electron beam lithography |
JP2003045786A (ja) * | 2001-08-01 | 2003-02-14 | Seiko Instruments Inc | ステンシルマスクのレイアウト図形データ分割処理装置、ステンシルマスクのレイアウト図形データ分割処理方法、コンピュータにステンシルマスクのレイアウト図形データ分割処理を行わせるためのプログラム |
DE10392343T5 (de) * | 2002-03-13 | 2005-03-10 | Sony Corp. | Maske, Herstellungsverfahren für Halbleitereinrichtung und Halbleitereinrichtung |
DE102007063649B4 (de) * | 2007-05-29 | 2018-08-02 | Advanced Mask Technology Center Gmbh & Co. Kg | Verfahren zum Erzeugen von Strukturen in einem Resistmaterial und Elektronenstrahlbelichtungsanlagen |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3326176A (en) * | 1964-10-27 | 1967-06-20 | Nat Res Corp | Work-registration device including ionic beam probe |
US3614423A (en) * | 1970-09-21 | 1971-10-19 | Stanford Research Inst | Charged particle pattern imaging and exposure system |
US3811069A (en) * | 1972-06-20 | 1974-05-14 | Westinghouse Electric Corp | Signal stabilization of an alignment detection device |
US3894271A (en) * | 1973-08-31 | 1975-07-08 | Ibm | Method and apparatus for aligning electron beams |
DE2460716C2 (de) * | 1974-12-19 | 1976-12-30 | Siemens Ag | Korpuskularstrahloptisches geraet zur korpuskelbestrahlung eines praeparats |
DE2547079C3 (de) * | 1975-10-17 | 1979-12-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Korpuskularbestrahlung eines Präparats |
-
1977
- 1977-09-02 DE DE2739502A patent/DE2739502C3/de not_active Expired
-
1978
- 1978-05-08 US US05/904,069 patent/US4169230A/en not_active Expired - Lifetime
- 1978-06-19 AT AT0446878A patent/AT376066B/de not_active IP Right Cessation
- 1978-07-19 DE DE7878100442T patent/DE2860937D1/de not_active Expired
- 1978-07-19 EP EP78100442A patent/EP0001042B1/de not_active Expired
- 1978-07-25 JP JP9006278A patent/JPS5441076A/ja active Granted
- 1978-08-25 IT IT27014/78A patent/IT1202764B/it active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6998201B2 (en) | 2001-11-12 | 2006-02-14 | Sony Corporation | Complementary masks and method of fabrication of same, exposure method, and semiconductor device and method of production of same |
US7462428B2 (en) | 2001-11-12 | 2008-12-09 | Sony Corporation | Complementary masks and method of fabrication of same, exposure method, and semiconductor device and method of production of same |
US6969571B2 (en) | 2001-11-30 | 2005-11-29 | Sony Corporation | Exposure method using complementary divided mask, exposure apparatus, semiconductor device, and method of producing the same |
US7160655B2 (en) | 2001-11-30 | 2007-01-09 | Sony Corporation | Exposure method using complementary divided mask, exposure apparatus, semiconductor device, and method of producing the same |
US7369213B2 (en) | 2001-11-30 | 2008-05-06 | Sony Corporation | Exposure method using complementary divided mask, exposure apparatus, semiconductor device, and method of producing the same |
Also Published As
Publication number | Publication date |
---|---|
AT376066B (de) | 1984-10-10 |
ATA446878A (de) | 1984-02-15 |
DE2739502B2 (de) | 1979-09-06 |
DE2739502A1 (de) | 1979-03-08 |
EP0001042B1 (de) | 1981-08-12 |
IT7827014A0 (it) | 1978-08-25 |
US4169230A (en) | 1979-09-25 |
DE2739502C3 (de) | 1980-07-03 |
DE2860937D1 (en) | 1981-11-12 |
EP0001042A1 (de) | 1979-03-21 |
IT1202764B (it) | 1989-02-09 |
JPS5416715B2 (ja) | 1979-06-25 |
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