JPS5441076A - Method of radiating charged beam using complementary mask - Google Patents

Method of radiating charged beam using complementary mask

Info

Publication number
JPS5441076A
JPS5441076A JP9006278A JP9006278A JPS5441076A JP S5441076 A JPS5441076 A JP S5441076A JP 9006278 A JP9006278 A JP 9006278A JP 9006278 A JP9006278 A JP 9006278A JP S5441076 A JPS5441076 A JP S5441076A
Authority
JP
Japan
Prior art keywords
charged beam
complementary mask
radiating
radiating charged
complementary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9006278A
Other languages
English (en)
Other versions
JPS5416715B2 (ja
Inventor
Booren Hararudo
Kuretsushiyunaa Yohan
Kurutsuke Berunaa
Niyuumitsutsu Peteru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5441076A publication Critical patent/JPS5441076A/ja
Publication of JPS5416715B2 publication Critical patent/JPS5416715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP9006278A 1977-09-02 1978-07-25 Method of radiating charged beam using complementary mask Granted JPS5441076A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2739502A DE2739502C3 (de) 1977-09-02 1977-09-02 Verfahren zur Belichtung durch Korpuskularstrahlen-Schattenwurf und Vorrichtung zur Durchführung des Verfahrens

Publications (2)

Publication Number Publication Date
JPS5441076A true JPS5441076A (en) 1979-03-31
JPS5416715B2 JPS5416715B2 (ja) 1979-06-25

Family

ID=6017915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9006278A Granted JPS5441076A (en) 1977-09-02 1978-07-25 Method of radiating charged beam using complementary mask

Country Status (6)

Country Link
US (1) US4169230A (ja)
EP (1) EP0001042B1 (ja)
JP (1) JPS5441076A (ja)
AT (1) AT376066B (ja)
DE (2) DE2739502C3 (ja)
IT (1) IT1202764B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6969571B2 (en) 2001-11-30 2005-11-29 Sony Corporation Exposure method using complementary divided mask, exposure apparatus, semiconductor device, and method of producing the same
US6998201B2 (en) 2001-11-12 2006-02-14 Sony Corporation Complementary masks and method of fabrication of same, exposure method, and semiconductor device and method of production of same

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2837590A1 (de) * 1978-08-29 1980-03-13 Ibm Deutschland Verfahren zur schattenwurfbelichtung
DE2841124C2 (de) * 1978-09-21 1984-09-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von elektronischen Halbleiterbauelementen durch Röntgen-Lithographie
DE2966200D1 (en) * 1978-10-30 1983-10-27 Sanden Corp Scroll-type fluid compressor units
US4310743A (en) * 1979-09-24 1982-01-12 Hughes Aircraft Company Ion beam lithography process and apparatus using step-and-repeat exposure
DE2939044A1 (de) * 1979-09-27 1981-04-09 Ibm Deutschland Gmbh, 7000 Stuttgart Einrichtung fuer elektronenstrahllithographie
US4504558A (en) * 1980-07-10 1985-03-12 International Business Machines Corporation Method of compensating the proximity effect in electron beam projection systems
DE3067832D1 (en) * 1980-07-10 1984-06-20 Ibm Process for compensating the proximity effect in electron beam projection devices
EP0055620B1 (en) * 1980-12-29 1985-12-18 Fujitsu Limited Method of projecting circuit patterns
DE3121666A1 (de) * 1981-05-30 1982-12-16 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und einrichtung zur gegenseitigen ausrichtung von objekten bei roentgenstrahl- und korpuskularstrahl-belichtungsvorgaengen
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
JPS5834918A (ja) * 1981-08-26 1983-03-01 Fujitsu Ltd 電子ビ−ム露光方法
DE3410885A1 (de) * 1984-03-24 1985-10-03 Ibm Deutschland Gmbh, 7000 Stuttgart Fehlerkorrigierte korpuskularstrahllithographie
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
US4845370A (en) * 1987-12-11 1989-07-04 Radiation Dynamics, Inc. Magnetic field former for charged particle beams
EP0364929B1 (en) * 1988-10-20 1995-09-06 Fujitsu Limited Fabrication method of semiconductor devices and transparent mask for charged particle beam
JPH03270215A (ja) * 1990-03-20 1991-12-02 Fujitsu Ltd 荷電粒子ビーム露光方法及び露光装置
JP2837515B2 (ja) * 1990-06-20 1998-12-16 富士通株式会社 電子ビーム露光装置
DE19642116C2 (de) * 1996-10-12 2000-12-07 Fraunhofer Ges Forschung Verfahren zur strukturierten Energieübertragung mit Elektronenstrahlen
US5831272A (en) * 1997-10-21 1998-11-03 Utsumi; Takao Low energy electron beam lithography
JP2003045786A (ja) * 2001-08-01 2003-02-14 Seiko Instruments Inc ステンシルマスクのレイアウト図形データ分割処理装置、ステンシルマスクのレイアウト図形データ分割処理方法、コンピュータにステンシルマスクのレイアウト図形データ分割処理を行わせるためのプログラム
WO2003077292A1 (fr) * 2002-03-13 2003-09-18 Sony Corporation Masque, procede de fabrication de dispositif semi-conducteur et dispositif semi-conducteur
DE102007063649B4 (de) * 2007-05-29 2018-08-02 Advanced Mask Technology Center Gmbh & Co. Kg Verfahren zum Erzeugen von Strukturen in einem Resistmaterial und Elektronenstrahlbelichtungsanlagen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3326176A (en) * 1964-10-27 1967-06-20 Nat Res Corp Work-registration device including ionic beam probe
US3614423A (en) * 1970-09-21 1971-10-19 Stanford Research Inst Charged particle pattern imaging and exposure system
US3811069A (en) * 1972-06-20 1974-05-14 Westinghouse Electric Corp Signal stabilization of an alignment detection device
US3894271A (en) * 1973-08-31 1975-07-08 Ibm Method and apparatus for aligning electron beams
DE2460716C2 (de) * 1974-12-19 1976-12-30 Siemens Ag Korpuskularstrahloptisches geraet zur korpuskelbestrahlung eines praeparats
DE2547079C3 (de) * 1975-10-17 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Korpuskularbestrahlung eines Präparats

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998201B2 (en) 2001-11-12 2006-02-14 Sony Corporation Complementary masks and method of fabrication of same, exposure method, and semiconductor device and method of production of same
US7462428B2 (en) 2001-11-12 2008-12-09 Sony Corporation Complementary masks and method of fabrication of same, exposure method, and semiconductor device and method of production of same
US6969571B2 (en) 2001-11-30 2005-11-29 Sony Corporation Exposure method using complementary divided mask, exposure apparatus, semiconductor device, and method of producing the same
US7160655B2 (en) 2001-11-30 2007-01-09 Sony Corporation Exposure method using complementary divided mask, exposure apparatus, semiconductor device, and method of producing the same
US7369213B2 (en) 2001-11-30 2008-05-06 Sony Corporation Exposure method using complementary divided mask, exposure apparatus, semiconductor device, and method of producing the same

Also Published As

Publication number Publication date
DE2860937D1 (en) 1981-11-12
DE2739502C3 (de) 1980-07-03
US4169230A (en) 1979-09-25
DE2739502B2 (de) 1979-09-06
EP0001042B1 (de) 1981-08-12
IT7827014A0 (it) 1978-08-25
AT376066B (de) 1984-10-10
ATA446878A (de) 1984-02-15
EP0001042A1 (de) 1979-03-21
JPS5416715B2 (ja) 1979-06-25
IT1202764B (it) 1989-02-09
DE2739502A1 (de) 1979-03-08

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