JPS5437584A - Field effect semiconductor device of insulation gate type - Google Patents

Field effect semiconductor device of insulation gate type

Info

Publication number
JPS5437584A
JPS5437584A JP10379377A JP10379377A JPS5437584A JP S5437584 A JPS5437584 A JP S5437584A JP 10379377 A JP10379377 A JP 10379377A JP 10379377 A JP10379377 A JP 10379377A JP S5437584 A JPS5437584 A JP S5437584A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
gate type
effect semiconductor
insulation gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10379377A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626660B2 (enrdf_load_stackoverflow
Inventor
Tadashi Kuragami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10379377A priority Critical patent/JPS5437584A/ja
Publication of JPS5437584A publication Critical patent/JPS5437584A/ja
Publication of JPS626660B2 publication Critical patent/JPS626660B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP10379377A 1977-08-29 1977-08-29 Field effect semiconductor device of insulation gate type Granted JPS5437584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10379377A JPS5437584A (en) 1977-08-29 1977-08-29 Field effect semiconductor device of insulation gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10379377A JPS5437584A (en) 1977-08-29 1977-08-29 Field effect semiconductor device of insulation gate type

Publications (2)

Publication Number Publication Date
JPS5437584A true JPS5437584A (en) 1979-03-20
JPS626660B2 JPS626660B2 (enrdf_load_stackoverflow) 1987-02-12

Family

ID=14363270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10379377A Granted JPS5437584A (en) 1977-08-29 1977-08-29 Field effect semiconductor device of insulation gate type

Country Status (1)

Country Link
JP (1) JPS5437584A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692781A (en) * 1984-06-06 1987-09-08 Texas Instruments Incorporated Semiconductor device with electrostatic discharge protection
US4757362A (en) * 1980-05-30 1988-07-12 Sharp Kabushiki Kaisha High voltage MOS transistor
US4766474A (en) * 1980-05-30 1988-08-23 Sharp Kabushiki Kiasha High voltage MOS transistor
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
US4757362A (en) * 1980-05-30 1988-07-12 Sharp Kabushiki Kaisha High voltage MOS transistor
US4766474A (en) * 1980-05-30 1988-08-23 Sharp Kabushiki Kiasha High voltage MOS transistor
US4692781A (en) * 1984-06-06 1987-09-08 Texas Instruments Incorporated Semiconductor device with electrostatic discharge protection

Also Published As

Publication number Publication date
JPS626660B2 (enrdf_load_stackoverflow) 1987-02-12

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