JPS54161272A - Flat semiconductor device - Google Patents

Flat semiconductor device

Info

Publication number
JPS54161272A
JPS54161272A JP7009878A JP7009878A JPS54161272A JP S54161272 A JPS54161272 A JP S54161272A JP 7009878 A JP7009878 A JP 7009878A JP 7009878 A JP7009878 A JP 7009878A JP S54161272 A JPS54161272 A JP S54161272A
Authority
JP
Japan
Prior art keywords
electrode
elastic body
insulator
ring
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7009878A
Other languages
Japanese (ja)
Other versions
JPS5647699B2 (en
Inventor
Mitsuo Odate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7009878A priority Critical patent/JPS54161272A/en
Priority to US05/957,330 priority patent/US4274106A/en
Priority to DE2848252A priority patent/DE2848252C2/en
Publication of JPS54161272A publication Critical patent/JPS54161272A/en
Publication of JPS5647699B2 publication Critical patent/JPS5647699B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To improve shock resistance by holding a ring insulator indirectly by a main electrode via an elastic body.
CONSTITUTION: The 1st elastic body 30 is inserted into the longitudinal gap where ring insulator 3 of electrode body 5 overlaps with electrode 4 at the inner circumference and outer circumference respectively. Next, semiconductor element 20 is inserted and ring elastic body 30 is also inserted into the step part of ring insulator 3; and electrode body 10 is equipped and welding rings 2 and 8 of electrode bodies 5 and 10 are sealed hermetically in inert gas. The device of this constitution, when pressure of several tons is applied to electrodes 4 and 9 via a cooling fin, has electrode element 20 and electrode 9 compression-welded at its center part and elastic body 30 deforms elastically; and elastic insulator 3 is held indirectly by main electrodes 4 and 9 via elastic body 30 and extremely-high shock resistance can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP7009878A 1977-11-07 1978-06-09 Flat semiconductor device Granted JPS54161272A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP7009878A JPS54161272A (en) 1978-06-09 1978-06-09 Flat semiconductor device
US05/957,330 US4274106A (en) 1977-11-07 1978-11-03 Explosion proof vibration resistant flat package semiconductor device
DE2848252A DE2848252C2 (en) 1977-11-07 1978-11-07 Semiconductor component and method for its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7009878A JPS54161272A (en) 1978-06-09 1978-06-09 Flat semiconductor device

Publications (2)

Publication Number Publication Date
JPS54161272A true JPS54161272A (en) 1979-12-20
JPS5647699B2 JPS5647699B2 (en) 1981-11-11

Family

ID=13421705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7009878A Granted JPS54161272A (en) 1977-11-07 1978-06-09 Flat semiconductor device

Country Status (1)

Country Link
JP (1) JPS54161272A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022542985A (en) * 2019-07-31 2022-10-07 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト power semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4848082A (en) * 1971-10-21 1973-07-07
JPS53112273A (en) * 1977-03-14 1978-09-30 Babcock Hitachi Kk Nox reduction method using urea

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4848082A (en) * 1971-10-21 1973-07-07
JPS53112273A (en) * 1977-03-14 1978-09-30 Babcock Hitachi Kk Nox reduction method using urea

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022542985A (en) * 2019-07-31 2022-10-07 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト power semiconductor device

Also Published As

Publication number Publication date
JPS5647699B2 (en) 1981-11-11

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