JPS54160172A - Manufacture of semiconductor device and cvd device used for the said manufacture - Google Patents

Manufacture of semiconductor device and cvd device used for the said manufacture

Info

Publication number
JPS54160172A
JPS54160172A JP6879878A JP6879878A JPS54160172A JP S54160172 A JPS54160172 A JP S54160172A JP 6879878 A JP6879878 A JP 6879878A JP 6879878 A JP6879878 A JP 6879878A JP S54160172 A JPS54160172 A JP S54160172A
Authority
JP
Japan
Prior art keywords
tube
si3n4
temperature
nh4cl
foreign matters
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6879878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6225256B2 (enrdf_load_stackoverflow
Inventor
Kazuya Kadota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6879878A priority Critical patent/JPS54160172A/ja
Publication of JPS54160172A publication Critical patent/JPS54160172A/ja
Publication of JPS6225256B2 publication Critical patent/JPS6225256B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
JP6879878A 1978-06-09 1978-06-09 Manufacture of semiconductor device and cvd device used for the said manufacture Granted JPS54160172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6879878A JPS54160172A (en) 1978-06-09 1978-06-09 Manufacture of semiconductor device and cvd device used for the said manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6879878A JPS54160172A (en) 1978-06-09 1978-06-09 Manufacture of semiconductor device and cvd device used for the said manufacture

Publications (2)

Publication Number Publication Date
JPS54160172A true JPS54160172A (en) 1979-12-18
JPS6225256B2 JPS6225256B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=13384090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6879878A Granted JPS54160172A (en) 1978-06-09 1978-06-09 Manufacture of semiconductor device and cvd device used for the said manufacture

Country Status (1)

Country Link
JP (1) JPS54160172A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62146265A (ja) * 1985-12-19 1987-06-30 Matsushita Electric Ind Co Ltd 気相化学蒸着装置
JPH07312364A (ja) * 1995-06-08 1995-11-28 Toshiba Corp 半導体製造装置及びその製造方法
JP2003209100A (ja) * 2002-01-15 2003-07-25 Tokura Kogyo Kk Ｃｖｄ排気系配管に付着堆積した塩化アンモニウムの除去方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62146265A (ja) * 1985-12-19 1987-06-30 Matsushita Electric Ind Co Ltd 気相化学蒸着装置
JPH07312364A (ja) * 1995-06-08 1995-11-28 Toshiba Corp 半導体製造装置及びその製造方法
JP2003209100A (ja) * 2002-01-15 2003-07-25 Tokura Kogyo Kk Ｃｖｄ排気系配管に付着堆積した塩化アンモニウムの除去方法

Also Published As

Publication number Publication date
JPS6225256B2 (enrdf_load_stackoverflow) 1987-06-02

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