JPS54158850A - Driver circuit of field effect transistor - Google Patents

Driver circuit of field effect transistor

Info

Publication number
JPS54158850A
JPS54158850A JP6793278A JP6793278A JPS54158850A JP S54158850 A JPS54158850 A JP S54158850A JP 6793278 A JP6793278 A JP 6793278A JP 6793278 A JP6793278 A JP 6793278A JP S54158850 A JPS54158850 A JP S54158850A
Authority
JP
Japan
Prior art keywords
diode
voltage
fet6
fet
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6793278A
Other languages
Japanese (ja)
Inventor
Yoshihiko Fukuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6793278A priority Critical patent/JPS54158850A/en
Publication of JPS54158850A publication Critical patent/JPS54158850A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To make it possible to drive a FET by low power, at a high speed and without breadking down the FET, by connecting a diode between the source and gate electrodes of the FET so that the diode will conduct while the FET is in an unconductive state. CONSTITUTION:Between gate electrode G and source electrode S of FET6, diode 7 is connected via the parallel connection circuit of diode 4 and resistor 5 so that when secondary winding 3s of transformer 3 and FET6 are both cut off, diode 7 will be ON. Then, FET6 perform the ON-OFF control of driving power supply 1 by switch element 2 (its terminal voltage is A) to induce a voltage at winding 3s, by which voltage VG1more than VG0 (voltage B) is applied between electrodes G and S to control a current flowing from terminal 8 to 9. As a result, the power consumption for turning ON FET6 is extremely small, the dropping time of voltage B when it is turned OFF can be shortened, and a reverse-polarity voltage between electrodes G and S can be clamped by diode 7.
JP6793278A 1978-06-05 1978-06-05 Driver circuit of field effect transistor Pending JPS54158850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6793278A JPS54158850A (en) 1978-06-05 1978-06-05 Driver circuit of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6793278A JPS54158850A (en) 1978-06-05 1978-06-05 Driver circuit of field effect transistor

Publications (1)

Publication Number Publication Date
JPS54158850A true JPS54158850A (en) 1979-12-15

Family

ID=13359182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6793278A Pending JPS54158850A (en) 1978-06-05 1978-06-05 Driver circuit of field effect transistor

Country Status (1)

Country Link
JP (1) JPS54158850A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604037U (en) * 1983-06-22 1985-01-12 ヤマハ株式会社 MOS-FET drive circuit for power amplification
JPS6118638U (en) * 1984-07-06 1986-02-03 富士電気化学株式会社 FET drive circuit
US4694206A (en) * 1983-12-14 1987-09-15 Agence Spatiale Europeenne Drive circuit for a power field effect transistor
JPH05102819A (en) * 1991-10-07 1993-04-23 Sansha Electric Mfg Co Ltd Driving circuit for isolation gate semiconductor element
JPH05199093A (en) * 1991-08-08 1993-08-06 Internatl Business Mach Corp <Ibm> P-channel field-effect transistor driver circuit
JPH05206813A (en) * 1992-06-24 1993-08-13 Shimada Phys & Chem Ind Co Ltd Transistor switching circuit
WO2016199428A1 (en) * 2015-06-10 2016-12-15 パナソニックＩｐマネジメント株式会社 Switch device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5397460A (en) * 1977-02-05 1978-08-25 Oki Electric Ind Co Ltd Underwater information observation system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5397460A (en) * 1977-02-05 1978-08-25 Oki Electric Ind Co Ltd Underwater information observation system

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604037U (en) * 1983-06-22 1985-01-12 ヤマハ株式会社 MOS-FET drive circuit for power amplification
US4694206A (en) * 1983-12-14 1987-09-15 Agence Spatiale Europeenne Drive circuit for a power field effect transistor
JPS6118638U (en) * 1984-07-06 1986-02-03 富士電気化学株式会社 FET drive circuit
JPH05199093A (en) * 1991-08-08 1993-08-06 Internatl Business Mach Corp <Ibm> P-channel field-effect transistor driver circuit
JPH05102819A (en) * 1991-10-07 1993-04-23 Sansha Electric Mfg Co Ltd Driving circuit for isolation gate semiconductor element
JPH05206813A (en) * 1992-06-24 1993-08-13 Shimada Phys & Chem Ind Co Ltd Transistor switching circuit
WO2016199428A1 (en) * 2015-06-10 2016-12-15 パナソニックＩｐマネジメント株式会社 Switch device

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