JPS54158849A - Driver circuit of field effect transistor - Google Patents

Driver circuit of field effect transistor

Info

Publication number
JPS54158849A
JPS54158849A JP6793178A JP6793178A JPS54158849A JP S54158849 A JPS54158849 A JP S54158849A JP 6793178 A JP6793178 A JP 6793178A JP 6793178 A JP6793178 A JP 6793178A JP S54158849 A JPS54158849 A JP S54158849A
Authority
JP
Japan
Prior art keywords
transformer
fet5
fet
diode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6793178A
Other languages
Japanese (ja)
Inventor
Yoshihiko Fukuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6793178A priority Critical patent/JPS54158849A/en
Publication of JPS54158849A publication Critical patent/JPS54158849A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To make it possible to drive a FET at a large duty ratio and without breaking down the FET by connecting the series circuit of the secondary winding of a transformer and a diode and a resistance berween the gate and source electrode of the FET. CONSTITUTION:Between gate electrode G and source electrodes S of FET5, the series circuit of secondary winding 3s of transformer 3 and diode 4, and resistance 6 are both connected. Then, driving voltage source 1, primary winding 3p of transformer 3, and transistor Tr2 are connected in series, and a pulse voltage, developed across secondary winding 3s of transformer 3 attending on the ON-OFF operation of Tr2, is applied to electrode G of FET5 via diode 4, thereby controlling a current which flows from terminal 7 to output terminal 8 by way of drain electrode D and electrodes of FET5. Further, ternary winding 3t of transformer 3 discharges an exciting current, accumulated in transformer 3, via diode 9 when Tr2 turns OFF, namely, rests the exciting current.
JP6793178A 1978-06-05 1978-06-05 Driver circuit of field effect transistor Pending JPS54158849A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6793178A JPS54158849A (en) 1978-06-05 1978-06-05 Driver circuit of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6793178A JPS54158849A (en) 1978-06-05 1978-06-05 Driver circuit of field effect transistor

Publications (1)

Publication Number Publication Date
JPS54158849A true JPS54158849A (en) 1979-12-15

Family

ID=13359150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6793178A Pending JPS54158849A (en) 1978-06-05 1978-06-05 Driver circuit of field effect transistor

Country Status (1)

Country Link
JP (1) JPS54158849A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4423341A (en) * 1981-01-02 1983-12-27 Sperry Corporation Fast switching field effect transistor driver circuit
US4443719A (en) * 1982-06-11 1984-04-17 Honeywell Inc. Voltage isolated gate drive circuit
US4511815A (en) * 1983-08-15 1985-04-16 International Rectifier Corporation Transformer-isolated power MOSFET driver circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4423341A (en) * 1981-01-02 1983-12-27 Sperry Corporation Fast switching field effect transistor driver circuit
US4443719A (en) * 1982-06-11 1984-04-17 Honeywell Inc. Voltage isolated gate drive circuit
US4511815A (en) * 1983-08-15 1985-04-16 International Rectifier Corporation Transformer-isolated power MOSFET driver circuit

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