JPS54156478A - Manufacture for semiconductor element - Google Patents

Manufacture for semiconductor element

Info

Publication number
JPS54156478A
JPS54156478A JP6426278A JP6426278A JPS54156478A JP S54156478 A JPS54156478 A JP S54156478A JP 6426278 A JP6426278 A JP 6426278A JP 6426278 A JP6426278 A JP 6426278A JP S54156478 A JPS54156478 A JP S54156478A
Authority
JP
Japan
Prior art keywords
performance
grooves
forming
junction surface
make
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6426278A
Other languages
Japanese (ja)
Inventor
Yoshio Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6426278A priority Critical patent/JPS54156478A/en
Publication of JPS54156478A publication Critical patent/JPS54156478A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To make efficient the measuring work for performance, by forming and separating the element performance, after forming the split grooves so that they reach the pn junction surface from the semiconductor substrate surface.
CONSTITUTION: The P layer 2 is formed on the n type GaP substrate 1. The split grooves 4 are formed exceeding the pn junction surface 3. Accordingly, in measuring the performance of each element after that, no effect is subjected from the adjacent element. Since each element keeps mutual location, the probing unit can make very efficient inspection. Further, separation is made along the grooves to remarkably increase the working efficiency.
COPYRIGHT: (C)1979,JPO&Japio
JP6426278A 1978-05-31 1978-05-31 Manufacture for semiconductor element Pending JPS54156478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6426278A JPS54156478A (en) 1978-05-31 1978-05-31 Manufacture for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6426278A JPS54156478A (en) 1978-05-31 1978-05-31 Manufacture for semiconductor element

Publications (1)

Publication Number Publication Date
JPS54156478A true JPS54156478A (en) 1979-12-10

Family

ID=13253098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6426278A Pending JPS54156478A (en) 1978-05-31 1978-05-31 Manufacture for semiconductor element

Country Status (1)

Country Link
JP (1) JPS54156478A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002025947A (en) * 2000-07-10 2002-01-25 Dowa Mining Co Ltd Manufacturing method for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002025947A (en) * 2000-07-10 2002-01-25 Dowa Mining Co Ltd Manufacturing method for semiconductor device
JP4564138B2 (en) * 2000-07-10 2010-10-20 Ｄｏｗａホールディングス株式会社 Manufacturing method of semiconductor device

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