JPS54153579A - Exposing method of electron beam - Google Patents

Exposing method of electron beam

Info

Publication number
JPS54153579A
JPS54153579A JP6255078A JP6255078A JPS54153579A JP S54153579 A JPS54153579 A JP S54153579A JP 6255078 A JP6255078 A JP 6255078A JP 6255078 A JP6255078 A JP 6255078A JP S54153579 A JPS54153579 A JP S54153579A
Authority
JP
Japan
Prior art keywords
electron beam
reflected
mark
exposing method
taken
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6255078A
Other languages
Japanese (ja)
Inventor
Toshihiko Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6255078A priority Critical patent/JPS54153579A/en
Publication of JPS54153579A publication Critical patent/JPS54153579A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To establish the mark position detection method which enables to increase the S/N of the detection signal. CONSTITUTION:When the electron beam E is scanned on the wafer toward a given direction, the output of the reflected electron detector S which is located at the direction having almost no strength change in the electron beam E reflected from the mark M, is removed. The difference between the output of the electron detector having the strongest strength change in the reflected electron beam and the weakest, is taken, and this is taken as the signal for mark detection to increases S/N.
JP6255078A 1978-05-25 1978-05-25 Exposing method of electron beam Pending JPS54153579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6255078A JPS54153579A (en) 1978-05-25 1978-05-25 Exposing method of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6255078A JPS54153579A (en) 1978-05-25 1978-05-25 Exposing method of electron beam

Publications (1)

Publication Number Publication Date
JPS54153579A true JPS54153579A (en) 1979-12-03

Family

ID=13203459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6255078A Pending JPS54153579A (en) 1978-05-25 1978-05-25 Exposing method of electron beam

Country Status (1)

Country Link
JP (1) JPS54153579A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03229409A (en) * 1990-02-05 1991-10-11 Matsushita Electron Corp Pattern detector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03229409A (en) * 1990-02-05 1991-10-11 Matsushita Electron Corp Pattern detector

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