JPS54152479A - Complementary circuit - Google Patents
Complementary circuitInfo
- Publication number
- JPS54152479A JPS54152479A JP5998278A JP5998278A JPS54152479A JP S54152479 A JPS54152479 A JP S54152479A JP 5998278 A JP5998278 A JP 5998278A JP 5998278 A JP5998278 A JP 5998278A JP S54152479 A JPS54152479 A JP S54152479A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- region
- poly
- chip
- complementary circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53059982A JPS5940294B2 (ja) | 1978-05-22 | 1978-05-22 | 相補形回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53059982A JPS5940294B2 (ja) | 1978-05-22 | 1978-05-22 | 相補形回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54152479A true JPS54152479A (en) | 1979-11-30 |
JPS5940294B2 JPS5940294B2 (ja) | 1984-09-29 |
Family
ID=13128878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53059982A Expired JPS5940294B2 (ja) | 1978-05-22 | 1978-05-22 | 相補形回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5940294B2 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3673471A (en) * | 1970-10-08 | 1972-06-27 | Fairchild Camera Instr Co | Doped semiconductor electrodes for mos type devices |
JPS49112574A (ja) * | 1973-02-24 | 1974-10-26 | ||
JPS50105283A (ja) * | 1974-01-25 | 1975-08-19 |
-
1978
- 1978-05-22 JP JP53059982A patent/JPS5940294B2/ja not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3673471A (en) * | 1970-10-08 | 1972-06-27 | Fairchild Camera Instr Co | Doped semiconductor electrodes for mos type devices |
JPS49112574A (ja) * | 1973-02-24 | 1974-10-26 | ||
JPS50105283A (ja) * | 1974-01-25 | 1975-08-19 |
Also Published As
Publication number | Publication date |
---|---|
JPS5940294B2 (ja) | 1984-09-29 |
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