JPS54148487A - Method of fabricating metallic semiconductor field effect transistor - Google Patents
Method of fabricating metallic semiconductor field effect transistorInfo
- Publication number
- JPS54148487A JPS54148487A JP4890379A JP4890379A JPS54148487A JP S54148487 A JPS54148487 A JP S54148487A JP 4890379 A JP4890379 A JP 4890379A JP 4890379 A JP4890379 A JP 4890379A JP S54148487 A JPS54148487 A JP S54148487A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- semiconductor field
- metallic semiconductor
- fabricating metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/900,635 US4253229A (en) | 1978-04-27 | 1978-04-27 | Self-aligned narrow gate MESFET process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54148487A true JPS54148487A (en) | 1979-11-20 |
Family
ID=25412837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4890379A Pending JPS54148487A (en) | 1978-04-27 | 1979-04-20 | Method of fabricating metallic semiconductor field effect transistor |
Country Status (5)
Country | Link |
---|---|
US (1) | US4253229A (ja) |
EP (1) | EP0005351B1 (ja) |
JP (1) | JPS54148487A (ja) |
CA (1) | CA1118113A (ja) |
DE (1) | DE2963393D1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56150872A (en) * | 1980-02-14 | 1981-11-21 | Xerox Corp | Super lsi self-matching schottky metal semiconductor field effect transistor structure and method of manufacturing same |
JPS5848470A (ja) * | 1981-08-31 | 1983-03-22 | バロ−ス・コ−ポレ−シヨン | 金属半導体電界効果トランジスタの製造方法 |
JPS6011998A (ja) * | 1983-06-30 | 1985-01-22 | 株式会社東芝 | プラント監視システム |
JPH03209729A (ja) * | 1990-11-13 | 1991-09-12 | Fujitsu Ltd | 電界効果型半導体装置 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5561037A (en) * | 1978-10-31 | 1980-05-08 | Toshiba Corp | Preparation of semiconductor device |
CA1131367A (en) * | 1978-11-13 | 1982-09-07 | Keming W. Yeh | Self-aligned mesfet having reduced series resistance |
US4304042A (en) * | 1978-11-13 | 1981-12-08 | Xerox Corporation | Self-aligned MESFETs having reduced series resistance |
FR2462781A1 (fr) * | 1979-07-27 | 1981-02-13 | Thomson Csf | Transistor a effet de champ a grille schottky autoalignee et son procede de fabrication |
US4393578A (en) * | 1980-01-02 | 1983-07-19 | General Electric Company | Method of making silicon-on-sapphire FET |
US4466174A (en) * | 1981-12-28 | 1984-08-21 | Texas Instruments Incorporated | Method for fabricating MESFET device using a double LOCOS process |
JPH01161773A (ja) * | 1987-12-18 | 1989-06-26 | Agency Of Ind Science & Technol | 化合物半導体装置の製造方法 |
US5143857A (en) * | 1988-11-07 | 1992-09-01 | Triquint Semiconductor, Inc. | Method of fabricating an electronic device with reduced susceptiblity to backgating effects |
FR2666172B1 (fr) * | 1990-08-24 | 1997-05-16 | Thomson Csf | Transistor de puissance et procede de realisation. |
US5344787A (en) * | 1993-09-24 | 1994-09-06 | Vlsi Technology, Inc. | Latid implants for increasing the effective width of transistor elements in a semiconductor device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3604107A (en) * | 1969-04-17 | 1971-09-14 | Collins Radio Co | Doped oxide field effect transistors |
US4124933A (en) * | 1974-05-21 | 1978-11-14 | U.S. Philips Corporation | Methods of manufacturing semiconductor devices |
GB1543363A (en) * | 1975-02-26 | 1979-04-04 | Nippon Electric Co | Dual-gate schottky barrier gate field effect transistors |
IT1041193B (it) * | 1975-08-08 | 1980-01-10 | Selenia Ind Elettroniche | Perfezionamenti nei procedimenti per la fabbricazione di dispositivi a semiconduttor |
US4029522A (en) * | 1976-06-30 | 1977-06-14 | International Business Machines Corporation | Method to fabricate ion-implanted layers with abrupt edges to reduce the parasitic resistance of Schottky barrier fets and bipolar transistors |
DE2633906A1 (de) * | 1976-07-28 | 1978-02-02 | Siemens Ag | Verfahren zur herstellung eines halbleiterbauelementes nach der si- gate-technik |
US4102733A (en) * | 1977-04-29 | 1978-07-25 | International Business Machines Corporation | Two and three mask process for IGFET fabrication |
-
1978
- 1978-04-27 US US05/900,635 patent/US4253229A/en not_active Expired - Lifetime
-
1979
- 1979-03-20 CA CA000323827A patent/CA1118113A/en not_active Expired
- 1979-04-20 JP JP4890379A patent/JPS54148487A/ja active Pending
- 1979-04-27 DE DE7979300721T patent/DE2963393D1/de not_active Expired
- 1979-04-27 EP EP79300721A patent/EP0005351B1/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56150872A (en) * | 1980-02-14 | 1981-11-21 | Xerox Corp | Super lsi self-matching schottky metal semiconductor field effect transistor structure and method of manufacturing same |
JPS5848470A (ja) * | 1981-08-31 | 1983-03-22 | バロ−ス・コ−ポレ−シヨン | 金属半導体電界効果トランジスタの製造方法 |
JPS6311787B2 (ja) * | 1981-08-31 | 1988-03-16 | Yunishisu Corp | |
JPS6011998A (ja) * | 1983-06-30 | 1985-01-22 | 株式会社東芝 | プラント監視システム |
JPH03209729A (ja) * | 1990-11-13 | 1991-09-12 | Fujitsu Ltd | 電界効果型半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
DE2963393D1 (en) | 1982-09-16 |
CA1118113A (en) | 1982-02-09 |
EP0005351A1 (en) | 1979-11-14 |
US4253229A (en) | 1981-03-03 |
EP0005351B1 (en) | 1982-07-28 |
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