JPS54136236A - Readout and write-in enable memory - Google Patents
Readout and write-in enable memoryInfo
- Publication number
- JPS54136236A JPS54136236A JP4450878A JP4450878A JPS54136236A JP S54136236 A JPS54136236 A JP S54136236A JP 4450878 A JP4450878 A JP 4450878A JP 4450878 A JP4450878 A JP 4450878A JP S54136236 A JPS54136236 A JP S54136236A
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- diagnosis
- self
- program
- ram
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4450878A JPS54136236A (en) | 1978-04-14 | 1978-04-14 | Readout and write-in enable memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4450878A JPS54136236A (en) | 1978-04-14 | 1978-04-14 | Readout and write-in enable memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54136236A true JPS54136236A (en) | 1979-10-23 |
JPS613028B2 JPS613028B2 (ja) | 1986-01-29 |
Family
ID=12693487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4450878A Granted JPS54136236A (en) | 1978-04-14 | 1978-04-14 | Readout and write-in enable memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54136236A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5671896A (en) * | 1979-11-14 | 1981-06-15 | Fujitsu Ltd | Memory constituting method |
JPS5771586A (en) * | 1980-08-27 | 1982-05-04 | Siemens Ag | Integrated static memory cell and method of driving same |
JPS5841490A (ja) * | 1981-09-04 | 1983-03-10 | Nec Corp | 記憶装置 |
JPS58118091A (ja) * | 1981-09-01 | 1983-07-13 | Kino Chikayuki | 半導体記憶回路 |
JPS59152597A (ja) * | 1983-02-18 | 1984-08-31 | Nec Corp | メモリ回路 |
JP2011518402A (ja) * | 2008-04-17 | 2011-06-23 | イントリンシツク・イー・デー・ベー・ベー | 負バイアス温度不安定性によるバーンインの発生を低減する方法 |
JP2012146390A (ja) * | 2005-11-01 | 2012-08-02 | Sandisk Il Ltd | フラッシュメモリをテストするための方法、システム、および、コンピュータで読み取り可能なコード |
-
1978
- 1978-04-14 JP JP4450878A patent/JPS54136236A/ja active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5671896A (en) * | 1979-11-14 | 1981-06-15 | Fujitsu Ltd | Memory constituting method |
JPS6218946B2 (ja) * | 1979-11-14 | 1987-04-25 | Fujitsu Ltd | |
JPS5771586A (en) * | 1980-08-27 | 1982-05-04 | Siemens Ag | Integrated static memory cell and method of driving same |
JPS58118091A (ja) * | 1981-09-01 | 1983-07-13 | Kino Chikayuki | 半導体記憶回路 |
JPS5841490A (ja) * | 1981-09-04 | 1983-03-10 | Nec Corp | 記憶装置 |
JPS59152597A (ja) * | 1983-02-18 | 1984-08-31 | Nec Corp | メモリ回路 |
JPH0241116B2 (ja) * | 1983-02-18 | 1990-09-14 | Nippon Electric Co | |
JP2012146390A (ja) * | 2005-11-01 | 2012-08-02 | Sandisk Il Ltd | フラッシュメモリをテストするための方法、システム、および、コンピュータで読み取り可能なコード |
JP2011518402A (ja) * | 2008-04-17 | 2011-06-23 | イントリンシツク・イー・デー・ベー・ベー | 負バイアス温度不安定性によるバーンインの発生を低減する方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS613028B2 (ja) | 1986-01-29 |
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