JPS54133092A - Semiconductor radiant ray detector of multi channel type - Google Patents

Semiconductor radiant ray detector of multi channel type

Info

Publication number
JPS54133092A
JPS54133092A JP4110078A JP4110078A JPS54133092A JP S54133092 A JPS54133092 A JP S54133092A JP 4110078 A JP4110078 A JP 4110078A JP 4110078 A JP4110078 A JP 4110078A JP S54133092 A JPS54133092 A JP S54133092A
Authority
JP
Japan
Prior art keywords
detector
collimator plate
insulation
junction layer
arranging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4110078A
Other languages
Japanese (ja)
Other versions
JPS586911B2 (en
Inventor
Toru Sugita
Tetsuji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP53041100A priority Critical patent/JPS586911B2/en
Publication of JPS54133092A publication Critical patent/JPS54133092A/en
Publication of JPS586911B2 publication Critical patent/JPS586911B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Measurement Of Radiation (AREA)

Abstract

PURPOSE:To enable the incident angle control for scattered X-rays, by forming the detector unit and the collimator plate separately, and arranging and containing the collimator plate fixed to the insulation support to each slide groove of the housing arranging the detector. CONSTITUTION:The rectifying junction layer is mounted on one surface of the Si substrate and the radiant ray detection element 11 providing the ohmic contact layer on another surface is mounted on the insulation mounting stand 2 of U-shaped type, and they are fixed with adhesives. Further, the output terminal 14 is provided at the junction layer via the electrode layer 13, and the ground terminal 17 is fitted to the junction layer via the electrode layer 16. The detector thus costituted is contained along the slide groove 22 provided with the housing 18, and the connectors 19 and 20 at the bottom are contacted with the terminals 14 and 17. On the other hand, the collimator plate 23 consisting of the metal plate having greater X-ray absorbing effect such as Mo and W is supported with the insulation supports 24a and 24b made of the same as the stand 12 and it is contained in the groove 22 while opposing to the detector with slight clearance.
JP53041100A 1978-04-07 1978-04-07 Multichannel semiconductor radiation detector Expired JPS586911B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53041100A JPS586911B2 (en) 1978-04-07 1978-04-07 Multichannel semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53041100A JPS586911B2 (en) 1978-04-07 1978-04-07 Multichannel semiconductor radiation detector

Publications (2)

Publication Number Publication Date
JPS54133092A true JPS54133092A (en) 1979-10-16
JPS586911B2 JPS586911B2 (en) 1983-02-07

Family

ID=12599049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53041100A Expired JPS586911B2 (en) 1978-04-07 1978-04-07 Multichannel semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS586911B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101806913A (en) * 2009-02-12 2010-08-18 日立电线株式会社 Radiation detector stand
JP2012037274A (en) * 2010-08-04 2012-02-23 Hitachi Consumer Electronics Co Ltd Radiation detector stand and radiation detection apparatus
CN102985849A (en) * 2010-07-15 2013-03-20 日立民用电子株式会社 Radiation detector
JP2018000496A (en) * 2016-06-30 2018-01-11 東芝メディカルシステムズ株式会社 X-ray detector, x-ray detector module, holding member and x-ray ct apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61171816U (en) * 1985-04-12 1986-10-25

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101806913A (en) * 2009-02-12 2010-08-18 日立电线株式会社 Radiation detector stand
JP2010185754A (en) * 2009-02-12 2010-08-26 Hitachi Cable Ltd Radiation detector stand
CN102985849A (en) * 2010-07-15 2013-03-20 日立民用电子株式会社 Radiation detector
JP2012037274A (en) * 2010-08-04 2012-02-23 Hitachi Consumer Electronics Co Ltd Radiation detector stand and radiation detection apparatus
JP2018000496A (en) * 2016-06-30 2018-01-11 東芝メディカルシステムズ株式会社 X-ray detector, x-ray detector module, holding member and x-ray ct apparatus

Also Published As

Publication number Publication date
JPS586911B2 (en) 1983-02-07

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