JPS54129987A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS54129987A JPS54129987A JP3774178A JP3774178A JPS54129987A JP S54129987 A JPS54129987 A JP S54129987A JP 3774178 A JP3774178 A JP 3774178A JP 3774178 A JP3774178 A JP 3774178A JP S54129987 A JPS54129987 A JP S54129987A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inner circumference
- cathode electrode
- led out
- main cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To improve dv/dt rating and turn-off time by varying impurity density distribution near the inner circumference of a N layer from which a main cathode electrode is led out.
CONSTITUTION: With the width of l=1∼3 from the inner circumference of the 2nd N layer 16 where main cathode electrode 18 is led out, the diffusion depth for a N- type emitter is made shallower than that of any other place and at junction J3 between layers 13 and 16, impurity density Cnp is made greater than that at any other place. As a result, electron injection efficiency decreases near inner circumference 16a of layer 16a and at the time of sudden rise-voltage application or of turning off, abnormal turning on will never occur at inner circumference 16a. Further, since turn-on sensitivity inside of the main SCR is low, the area of an auxiliary SCR can be made small, so that the area of the N layer can be increased relatively where the main cathode electrode is led out.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3774178A JPS6058596B2 (en) | 1978-03-31 | 1978-03-31 | thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3774178A JPS6058596B2 (en) | 1978-03-31 | 1978-03-31 | thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54129987A true JPS54129987A (en) | 1979-10-08 |
JPS6058596B2 JPS6058596B2 (en) | 1985-12-20 |
Family
ID=12505903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3774178A Expired JPS6058596B2 (en) | 1978-03-31 | 1978-03-31 | thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6058596B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57180167A (en) * | 1981-04-28 | 1982-11-06 | Siemens Ag | Thyristor |
-
1978
- 1978-03-31 JP JP3774178A patent/JPS6058596B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57180167A (en) * | 1981-04-28 | 1982-11-06 | Siemens Ag | Thyristor |
Also Published As
Publication number | Publication date |
---|---|
JPS6058596B2 (en) | 1985-12-20 |
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