JPS54129987A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS54129987A
JPS54129987A JP3774178A JP3774178A JPS54129987A JP S54129987 A JPS54129987 A JP S54129987A JP 3774178 A JP3774178 A JP 3774178A JP 3774178 A JP3774178 A JP 3774178A JP S54129987 A JPS54129987 A JP S54129987A
Authority
JP
Japan
Prior art keywords
layer
inner circumference
cathode electrode
led out
main cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3774178A
Other languages
Japanese (ja)
Other versions
JPS6058596B2 (en
Inventor
Osamu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP3774178A priority Critical patent/JPS6058596B2/en
Publication of JPS54129987A publication Critical patent/JPS54129987A/en
Publication of JPS6058596B2 publication Critical patent/JPS6058596B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To improve dv/dt rating and turn-off time by varying impurity density distribution near the inner circumference of a N layer from which a main cathode electrode is led out.
CONSTITUTION: With the width of l=1∼3 from the inner circumference of the 2nd N layer 16 where main cathode electrode 18 is led out, the diffusion depth for a N- type emitter is made shallower than that of any other place and at junction J3 between layers 13 and 16, impurity density Cnp is made greater than that at any other place. As a result, electron injection efficiency decreases near inner circumference 16a of layer 16a and at the time of sudden rise-voltage application or of turning off, abnormal turning on will never occur at inner circumference 16a. Further, since turn-on sensitivity inside of the main SCR is low, the area of an auxiliary SCR can be made small, so that the area of the N layer can be increased relatively where the main cathode electrode is led out.
COPYRIGHT: (C)1979,JPO&Japio
JP3774178A 1978-03-31 1978-03-31 thyristor Expired JPS6058596B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3774178A JPS6058596B2 (en) 1978-03-31 1978-03-31 thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3774178A JPS6058596B2 (en) 1978-03-31 1978-03-31 thyristor

Publications (2)

Publication Number Publication Date
JPS54129987A true JPS54129987A (en) 1979-10-08
JPS6058596B2 JPS6058596B2 (en) 1985-12-20

Family

ID=12505903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3774178A Expired JPS6058596B2 (en) 1978-03-31 1978-03-31 thyristor

Country Status (1)

Country Link
JP (1) JPS6058596B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180167A (en) * 1981-04-28 1982-11-06 Siemens Ag Thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180167A (en) * 1981-04-28 1982-11-06 Siemens Ag Thyristor

Also Published As

Publication number Publication date
JPS6058596B2 (en) 1985-12-20

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