JPS54124983A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54124983A JPS54124983A JP3328478A JP3328478A JPS54124983A JP S54124983 A JPS54124983 A JP S54124983A JP 3328478 A JP3328478 A JP 3328478A JP 3328478 A JP3328478 A JP 3328478A JP S54124983 A JPS54124983 A JP S54124983A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- turn
- short part
- voltage
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3328478A JPS54124983A (en) | 1978-03-22 | 1978-03-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3328478A JPS54124983A (en) | 1978-03-22 | 1978-03-22 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54124983A true JPS54124983A (en) | 1979-09-28 |
| JPS6148271B2 JPS6148271B2 (enrdf_load_stackoverflow) | 1986-10-23 |
Family
ID=12382226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3328478A Granted JPS54124983A (en) | 1978-03-22 | 1978-03-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54124983A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5828869A (ja) * | 1981-08-12 | 1983-02-19 | Mitsubishi Electric Corp | 半導体装置 |
| JPS61145864A (ja) * | 1984-12-20 | 1986-07-03 | Fuji Electric Co Ltd | サイリスタ |
| JPS61287268A (ja) * | 1985-06-14 | 1986-12-17 | Res Dev Corp Of Japan | Gtoサイリスタ |
| US4855799A (en) * | 1987-12-22 | 1989-08-08 | Kabushiki Kaisha Toshiba | Power MOS FET with carrier lifetime killer |
-
1978
- 1978-03-22 JP JP3328478A patent/JPS54124983A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5828869A (ja) * | 1981-08-12 | 1983-02-19 | Mitsubishi Electric Corp | 半導体装置 |
| JPS61145864A (ja) * | 1984-12-20 | 1986-07-03 | Fuji Electric Co Ltd | サイリスタ |
| JPS61287268A (ja) * | 1985-06-14 | 1986-12-17 | Res Dev Corp Of Japan | Gtoサイリスタ |
| US4855799A (en) * | 1987-12-22 | 1989-08-08 | Kabushiki Kaisha Toshiba | Power MOS FET with carrier lifetime killer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6148271B2 (enrdf_load_stackoverflow) | 1986-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4259683A (en) | High switching speed P-N junction devices with recombination means centrally located in high resistivity layer | |
| EP0009367A1 (en) | Gate turn-off thyristor | |
| US3538401A (en) | Drift field thyristor | |
| US4662957A (en) | Method of producing a gate turn-off thyristor | |
| US4574296A (en) | Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations | |
| JPS5596677A (en) | Semiconductor switching element and method of controlling the same | |
| JPS54124983A (en) | Semiconductor device | |
| JPS6466965A (en) | Gate turn-off thyristor | |
| JPS5778172A (en) | Gate turn-off thyristor | |
| JPS57188875A (en) | Gate turn off thyristor | |
| JPS57138175A (en) | Controlled rectifier for semiconductor | |
| JPS5473585A (en) | Gate turn-off thyristor | |
| JPS5718360A (en) | Gate controlling semiconductor element | |
| US5005065A (en) | High current gate turn-off thyristor | |
| US3317359A (en) | Method of forming a transistor by diffusing recombination centers and device produced thereby | |
| JPS54126462A (en) | Production of semiconductor device | |
| JPS54120588A (en) | Gate turn-off thyristor | |
| JPS5493989A (en) | Semiconductor device | |
| JPS5667970A (en) | Gate turn-off thyristor | |
| JPS54148486A (en) | Semiconductor device | |
| JPS55165675A (en) | Thyristor | |
| JPH05145064A (ja) | ゲートターンオフサイリスタ | |
| JPS5683064A (en) | Thyristor | |
| JPS5624972A (en) | Thyristor | |
| JPS55102264A (en) | Semiconductor device and method of fabricating the same |