JPS54123886A - Semiconductor laser unit for high speed modulation - Google Patents

Semiconductor laser unit for high speed modulation

Info

Publication number
JPS54123886A
JPS54123886A JP3133778A JP3133778A JPS54123886A JP S54123886 A JPS54123886 A JP S54123886A JP 3133778 A JP3133778 A JP 3133778A JP 3133778 A JP3133778 A JP 3133778A JP S54123886 A JPS54123886 A JP S54123886A
Authority
JP
Japan
Prior art keywords
layer
active layer
electrodes
type
oscillation light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3133778A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6125234B2 (enrdf_load_stackoverflow
Inventor
Rangu.Roi
Isao Hino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3133778A priority Critical patent/JPS54123886A/ja
Publication of JPS54123886A publication Critical patent/JPS54123886A/ja
Publication of JPS6125234B2 publication Critical patent/JPS6125234B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP3133778A 1978-03-17 1978-03-17 Semiconductor laser unit for high speed modulation Granted JPS54123886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3133778A JPS54123886A (en) 1978-03-17 1978-03-17 Semiconductor laser unit for high speed modulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3133778A JPS54123886A (en) 1978-03-17 1978-03-17 Semiconductor laser unit for high speed modulation

Publications (2)

Publication Number Publication Date
JPS54123886A true JPS54123886A (en) 1979-09-26
JPS6125234B2 JPS6125234B2 (enrdf_load_stackoverflow) 1986-06-14

Family

ID=12328426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3133778A Granted JPS54123886A (en) 1978-03-17 1978-03-17 Semiconductor laser unit for high speed modulation

Country Status (1)

Country Link
JP (1) JPS54123886A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210684A (en) * 1981-02-09 1982-12-24 Fujitsu Ltd Photosemiconductor device
JPS5932188A (ja) * 1982-08-16 1984-02-21 Omron Tateisi Electronics Co ビ−ム走査形半導体レ−ザ
JPS61196591A (ja) * 1985-02-25 1986-08-30 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ
US4813054A (en) * 1986-11-08 1989-03-14 Stc Plc Distributed feedback laser
JP2016111087A (ja) * 2014-12-03 2016-06-20 株式会社豊田中央研究所 光半導体素子、光半導体装置および光半導体素子の実装方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210684A (en) * 1981-02-09 1982-12-24 Fujitsu Ltd Photosemiconductor device
JPS5932188A (ja) * 1982-08-16 1984-02-21 Omron Tateisi Electronics Co ビ−ム走査形半導体レ−ザ
JPS61196591A (ja) * 1985-02-25 1986-08-30 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ
US4813054A (en) * 1986-11-08 1989-03-14 Stc Plc Distributed feedback laser
JP2016111087A (ja) * 2014-12-03 2016-06-20 株式会社豊田中央研究所 光半導体素子、光半導体装置および光半導体素子の実装方法

Also Published As

Publication number Publication date
JPS6125234B2 (enrdf_load_stackoverflow) 1986-06-14

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