JPS54122938A - Driver circuit - Google Patents

Driver circuit

Info

Publication number
JPS54122938A
JPS54122938A JP3077478A JP3077478A JPS54122938A JP S54122938 A JPS54122938 A JP S54122938A JP 3077478 A JP3077478 A JP 3077478A JP 3077478 A JP3077478 A JP 3077478A JP S54122938 A JPS54122938 A JP S54122938A
Authority
JP
Japan
Prior art keywords
circuit
effect transistor
electrode
voltage floating
drive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3077478A
Other languages
Japanese (ja)
Inventor
Tsutomu Iima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3077478A priority Critical patent/JPS54122938A/en
Publication of JPS54122938A publication Critical patent/JPS54122938A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To enable high frequency operation with higher integrated density without malfunction due to noise, by avoiding the voltage floating of the drive output with the bias means, in IC driving. CONSTITUTION:The circuit consists of the switching insulation gate field effect transistor M25 supplying address signal selectively to the memory cell, biasing insulation gate effect transistor M26 urging the non-selection of the memory cell, and biasing insulation gate effect transistor M27 to prevent voltage floating. Further, M25 connects the drain electrode to the first reference power supply source +V, the gate electrode is connected to the output terminal of the address decoder circuit 1, the source electrode is connected to the drain electrode of M26 and M27, the gate electrode of M26 is connected to the discharge drive pulse signal phi. The source electrode of M26 and M27 is connected to the second reference potential to drive the memory circuit 3. As a result, the voltage floating of the drive output from the circuit 22 can be prevented.
JP3077478A 1978-03-16 1978-03-16 Driver circuit Pending JPS54122938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3077478A JPS54122938A (en) 1978-03-16 1978-03-16 Driver circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3077478A JPS54122938A (en) 1978-03-16 1978-03-16 Driver circuit

Publications (1)

Publication Number Publication Date
JPS54122938A true JPS54122938A (en) 1979-09-22

Family

ID=12313022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3077478A Pending JPS54122938A (en) 1978-03-16 1978-03-16 Driver circuit

Country Status (1)

Country Link
JP (1) JPS54122938A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5166736A (en) * 1974-10-30 1976-06-09 Hitachi Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5166736A (en) * 1974-10-30 1976-06-09 Hitachi Ltd

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