SU1483628A1 - Device for matching voltage levels using cmds transistors - Google Patents

Abstract

The invention relates to a pulsed technique and can be used to create integrated circuits on CMD transistors. The device contains an inverter 1, N - channel transistors 4 and 6 and p - channel transistor 5. The introduction of a bipolar capacitive element 7, which can be made in the form of a MOS transistor, and the formation of new functional connections serve to reduce the power consumption of the device. 1 h. P. f - ly, 1 il.

Description

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The invention relates to a pulsed technique and can be used to create integrated circuits on CMP transistors.

The purpose of the invention is to reduce power consumption.

The drawing shows an electrical schematic diagram of a device for matching voltage levels on a CMDP transistor.

The device for matching the voltage levels contains an output inverter 1, consisting of n-channel and p-channel transistors, connected between the power bus 2 and the common bus 3, the first n-channel 4 and p-channel 5 transistors, the drains of which are connected and combined with the input of the output inverter 1, and the sources are connected respectively to the common bus 3 and the power bus 2, the second n-channel transistor 6 connected between the gate of the p-channel transistor 5 and the output of the output inverter 1, and the gate of the second n-channel transistor 6 is connected to sh 2 does not supply and a capacitive bipolar element 7 connected between the input bus 8 and the gate p-channel transistor 5, the gate of the first transistor is ap channel 4 is connected to an input bus 8, and the output of the inverter output is connected to one output line 9.

The device works as follows.

In the initial state, a high level of control voltage is found on the device B. BUS 8, then the transistor 4 is open, the voltage close to zero is set at the input of the output inverter 1, and at its output and, therefore, at the output bus 9 voltage close to the supply voltage, while the gate of the transistor 5 sets the voltage lower than the supply voltage by the threshold voltage of transistor 6, the transistor 5 is closed or very large resistance (depending on the ratio of threshold voltages t ranzistor 5 and 6), the n-channel transistor of the output inverter is closed and the current from the power source is practically not consumed.

When the input voltage goes from high to low, transistor 4 closes, transistor 5

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voltage difference opens to its gate through capacitive element 7, then the voltage at the input of the output inverter 1 tends to supply voltage, and on the output bus 9 to zero, through the transistor 6 this potential is transmitted to the gate of transistor 5 and fixes the last in the open state, the low voltage level is set on the output bus, the transistor 4 is closed, the p-channel transistor of the output inverter is closed, the current from the power source is not consumed.

When the voltage on the input bus 8 goes from low to high level, the transistor 4 opens, the voltage drop across the capacitive element 7 goes to the gate of transistor 5, which reduces the conductivity of the latter, the input voltage of the output inverter decreases and tends to zero, and the output bus 9 increases and tends to supply voltage, while at the gate of transistor 5 a voltage is established, a lower voltage than the supply voltage of the threshold voltage of transistor 6, the conductivity of transistor 5 decreases and the current from the power source is practically not consumed (similar to the initial state).

Formula inventions

1. A device for matching voltage levels on a KMDP transistor, comprising an output inverter connected between a power line and a common line, the output of which is connected to the output line, the first n-channel transistor, the gate of which is connected to the input line, the source is connected to the general line, and the drain is connected to the input of the output inverter, the p-channel transistor, the drain of which is connected to the drain of the first n-channel transistor, and the source is connected to the power supply bus, and the second n-channel transistor, characterized in that, in order to reduce power consumption, at It introduced a bipolar capacitive element connected between the input bus and the gate of the p-channel transistor, the source of the second n-channel transistor is connected to the output bus, the drain - with the gate of the p-channel

514836286

the transistor, and the gate with the bus, the kin capacitor element is made in the direction of the tir transistor, the drain, the source and

the substrate of which is combined and co2. The device according to claim 1, about tl and - dinene with one pole of capacitive one, in that the two-pole element, and the gate with the other.

Claims (2)

Claim 1. A device for matching voltage levels on KMDP transistors containing an output inverter connected between the power bus and the common bus, the output of which is connected to the output bus, the first p-channel transistor, the gate of which is connected to the input bus, the source - with the common bus, and the drain is with the input of the output inverter, a p-channel transistor, the drain of which is connected to the drain of the first η-channel transistor, and the source is connected to the power bus, and the second p-channel transistor, characterized in that, in order to reduce power consumption, not a bipolar introduced capacitive element provided between an input bus and the gate of p-channel transistor, the source of the second p-channel transistor is connected to the output line, the drain - a p-channel gate 5 1483628 transistor, and the shutter - with a power bus. 2. The device according to claim 1, characterized in that the bipolar capacitive element is made in the form of an MCP transistor, the drain, source and substrate of which are combined and connected to one pole of the capacitive element, and the gate to the other.