JPS54120299A - Production of beta-type silicon nitride - Google Patents
Production of beta-type silicon nitrideInfo
- Publication number
- JPS54120299A JPS54120299A JP2747178A JP2747178A JPS54120299A JP S54120299 A JPS54120299 A JP S54120299A JP 2747178 A JP2747178 A JP 2747178A JP 2747178 A JP2747178 A JP 2747178A JP S54120299 A JPS54120299 A JP S54120299A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- cpd
- metallic
- type silicon
- metallic silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0682—Preparation by direct nitridation of silicon
Abstract
PURPOSE: To cheaply produce β-type silicon nitride useful as fire brick, an iron discharge spout material for a blast furnace, etc. in a simple process and a high yield by nitriding mixed powder or metallic silicon and a magnesium cpd. at a temp. below the m.p. of metallic silicon.
CONSTITUTION: To metallic silicon of a purity above 95% and a grain size below 150 mesh is added a Mg cpd. as a nitriding accelerator, As the Mg cpd. MgO shows the highest effect, yet MgCO3, MgCl2l and MgF2 can be used. The amt. of the Mg cpd. added is 0.05W1% as metallic Mg to the metallic silicon. This powder mixt. is charged into a nitriding furnace and nitrided at below the m.p. (1400°C) of metallic silicon and above 1100°C with nitrogen or NH3-contg. gas introduced, forming β-type silicon nitride. Thus, silicon nitride can be obtd. contg. more than 90% of β-type silicon nitride.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2747178A JPS54120299A (en) | 1978-03-10 | 1978-03-10 | Production of beta-type silicon nitride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2747178A JPS54120299A (en) | 1978-03-10 | 1978-03-10 | Production of beta-type silicon nitride |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54120299A true JPS54120299A (en) | 1979-09-18 |
Family
ID=12222018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2747178A Pending JPS54120299A (en) | 1978-03-10 | 1978-03-10 | Production of beta-type silicon nitride |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54120299A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4590053A (en) * | 1983-07-14 | 1986-05-20 | Sumitomo Chemical Company, Limited | Method for producing α-form silicon nitride fine powders |
-
1978
- 1978-03-10 JP JP2747178A patent/JPS54120299A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4590053A (en) * | 1983-07-14 | 1986-05-20 | Sumitomo Chemical Company, Limited | Method for producing α-form silicon nitride fine powders |
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