JPS54119846A - Memory unit - Google Patents

Memory unit

Info

Publication number
JPS54119846A
JPS54119846A JP2702978A JP2702978A JPS54119846A JP S54119846 A JPS54119846 A JP S54119846A JP 2702978 A JP2702978 A JP 2702978A JP 2702978 A JP2702978 A JP 2702978A JP S54119846 A JPS54119846 A JP S54119846A
Authority
JP
Japan
Prior art keywords
memory
section
deficient
memory section
word area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2702978A
Other languages
Japanese (ja)
Other versions
JPS5847798B2 (en
Inventor
Ryuichi Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53027029A priority Critical patent/JPS5847798B2/en
Publication of JPS54119846A publication Critical patent/JPS54119846A/en
Publication of JPS5847798B2 publication Critical patent/JPS5847798B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE: To enable to use the memory element including even deficient memory cells, by accessing the substituted memory section by taking the output of the decision by majority logic section as the address.
CONSTITUTION: The unit provides the memory section 24 providing the flag bit which can display whether it is deficient word area or not every word area, decision by majority logic section 26 inputted for the data read out from it and substituted memory section 31. When the flag bit information of the data read out 23 from the memory section 24 displays that it is stored in the deficient word area, constitution is taken that the memory section 27 is accessed by taking the output of the logic section 26 as the address. As a result, the memory element including even deficient memory cells can be used.
COPYRIGHT: (C)1979,JPO&Japio
JP53027029A 1978-03-09 1978-03-09 Storage device Expired JPS5847798B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53027029A JPS5847798B2 (en) 1978-03-09 1978-03-09 Storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53027029A JPS5847798B2 (en) 1978-03-09 1978-03-09 Storage device

Publications (2)

Publication Number Publication Date
JPS54119846A true JPS54119846A (en) 1979-09-18
JPS5847798B2 JPS5847798B2 (en) 1983-10-25

Family

ID=12209637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53027029A Expired JPS5847798B2 (en) 1978-03-09 1978-03-09 Storage device

Country Status (1)

Country Link
JP (1) JPS5847798B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9384860B2 (en) 2010-12-15 2016-07-05 Fujitsu Limited Semiconductor memory of which defective cell is replaceable with redundant cell and manufacturing method of semiconductor memory

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105190762B (en) * 2013-03-13 2018-06-12 长瀬产业株式会社 Semiconductor device and write-in/reading log in method of the address in semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9384860B2 (en) 2010-12-15 2016-07-05 Fujitsu Limited Semiconductor memory of which defective cell is replaceable with redundant cell and manufacturing method of semiconductor memory

Also Published As

Publication number Publication date
JPS5847798B2 (en) 1983-10-25

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