JPS54116887A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS54116887A
JPS54116887A JP2408878A JP2408878A JPS54116887A JP S54116887 A JPS54116887 A JP S54116887A JP 2408878 A JP2408878 A JP 2408878A JP 2408878 A JP2408878 A JP 2408878A JP S54116887 A JPS54116887 A JP S54116887A
Authority
JP
Japan
Prior art keywords
drain
gate
source
wiring
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2408878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626662B2 (cs
Inventor
Toru Tsujiide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2408878A priority Critical patent/JPS54116887A/ja
Publication of JPS54116887A publication Critical patent/JPS54116887A/ja
Publication of JPS626662B2 publication Critical patent/JPS626662B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
JP2408878A 1978-03-02 1978-03-02 Mos type semiconductor device Granted JPS54116887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2408878A JPS54116887A (en) 1978-03-02 1978-03-02 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2408878A JPS54116887A (en) 1978-03-02 1978-03-02 Mos type semiconductor device

Publications (2)

Publication Number Publication Date
JPS54116887A true JPS54116887A (en) 1979-09-11
JPS626662B2 JPS626662B2 (cs) 1987-02-12

Family

ID=12128627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2408878A Granted JPS54116887A (en) 1978-03-02 1978-03-02 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS54116887A (cs)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4481521A (en) * 1978-11-06 1984-11-06 Nippon Electric Co., Ltd. Insulated gate field effect transistor provided with a protective device for a gate insulating film
US4489245A (en) * 1980-09-10 1984-12-18 Kabushiki Kaisha Toshiba D.C. Voltage bias circuit in an integrated circuit
US4509067A (en) * 1981-06-23 1985-04-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit devices with protective means against overvoltages
US4541002A (en) * 1981-06-30 1985-09-10 Fujitsu Limited Protective device for a semiconductor integrated circuit including double polysilicon resistor
JPS6132562A (ja) * 1984-07-25 1986-02-15 Hitachi Ltd 半導体装置
US4580063A (en) * 1981-12-04 1986-04-01 Sgs-Ates Componenti Elettronics S.P.A. Circuit for the protection of IGFETs from overvoltage
JPS61128553A (ja) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp 入力保護回路
US4630084A (en) * 1981-02-02 1986-12-16 Siemens Aktiengesellschaft Vertical mis-field effect transistor with low forward resistance
US4633283A (en) * 1985-03-11 1986-12-30 Rca Corporation Circuit and structure for protecting integrated circuits from destructive transient voltages
JPS6276676A (ja) * 1985-09-30 1987-04-08 Toshiba Corp Ｍｏｓ型半導体集積回路装置
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
JPH08227976A (ja) * 1994-10-19 1996-09-03 Siliconix Inc 集積回路のための静電放電保護装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4481521A (en) * 1978-11-06 1984-11-06 Nippon Electric Co., Ltd. Insulated gate field effect transistor provided with a protective device for a gate insulating film
US4489245A (en) * 1980-09-10 1984-12-18 Kabushiki Kaisha Toshiba D.C. Voltage bias circuit in an integrated circuit
US4630084A (en) * 1981-02-02 1986-12-16 Siemens Aktiengesellschaft Vertical mis-field effect transistor with low forward resistance
US4509067A (en) * 1981-06-23 1985-04-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit devices with protective means against overvoltages
US4541002A (en) * 1981-06-30 1985-09-10 Fujitsu Limited Protective device for a semiconductor integrated circuit including double polysilicon resistor
US4580063A (en) * 1981-12-04 1986-04-01 Sgs-Ates Componenti Elettronics S.P.A. Circuit for the protection of IGFETs from overvoltage
JPS6132562A (ja) * 1984-07-25 1986-02-15 Hitachi Ltd 半導体装置
JPS61128553A (ja) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp 入力保護回路
US4633283A (en) * 1985-03-11 1986-12-30 Rca Corporation Circuit and structure for protecting integrated circuits from destructive transient voltages
JPS6276676A (ja) * 1985-09-30 1987-04-08 Toshiba Corp Ｍｏｓ型半導体集積回路装置
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
JPH08227976A (ja) * 1994-10-19 1996-09-03 Siliconix Inc 集積回路のための静電放電保護装置

Also Published As

Publication number Publication date
JPS626662B2 (cs) 1987-02-12

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